Patent classifications
C08G8/14
NOVOLAC-TYPE PHENOLIC HYDROXY GROUP-CONTAINING RESIN, AND RESIST FILM
Provided are a novolac-type phenolic hydroxy group-containing resin having excellent developability, heat resistance, and dry etching resistance and a resist film. The novolac-type phenolic hydroxy group-containing resin includes, as a repeating unit, a structural moiety (I) represented by Structural Formula (1):
##STR00001##
wherein Ar represents an arylene group; R.sup.1's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and m's each independently represent an integer of 1 to 3, or a structural moiety (II) represented by Structural Formula (2):
##STR00002##
wherein Ar represents an arylene group; R.sup.1's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and m's each independently represent an integer of 1 to 3.
COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD
The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent:
##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.
MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD
The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),
##STR00001##
wherein R.sup.1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R.sup.2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R.sup.2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m.sup.2 is independently an integer of 0 to 7, provided that at least one m.sup.2 is an integer of 1 to 7, and each q is independently 0 or 1.
COMPOUND, RESIN, AND PURIFICATION METHOD THEREOF, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM, AND UNDERLAYER FILM, AS WELL AS RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD
The present invention provides a compound represented by following formula (1),
##STR00001##
wherein R.sup.1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R.sup.2 to R.sup.5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R.sup.1 to R.sup.5 represents a group including an iodine atom and at least one R.sup.4 and/or at least one R.sup.5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m.sup.2 and m.sup.3 independently represents an integer of 0 to 8, each of m.sup.4 and m.sup.5 independently represents an integer of 0 to 9, provided that m.sup.4 and m.sup.5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p.sup.2 to p.sup.5 independently represents an integer of 0 to 2.
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN
The present invention is a compound represented by the following general formula (1).
##STR00001##
COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT
The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.
RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
The resist material according to the present invention contains a compound represented by the following formula (1):
##STR00001##
wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.
MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1):
##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
POLYMER MEDICAMENT FOR TREATING HYPERKALEMIA AND PREPARATION METHOD THEREOF
Provided are a polymer medicament for treating hyperkalemia, and a preparation method thereof. Specifically, a polymer is provided, and the polymer includes repeating units obtained by polymerizing a monomer and a crosslinking agent. A molar ratio of the monomer to the crosslinking reagent ranges from 1:0.02 to 1:0.20. The monomer includes an acidic group and a pKa-reducing group next to the acidic group. The acidic group is selected from the group consisting of sulfonic acid group (SO.sub.3.sup.), sulfuric acid group (OSO.sub.3.sup.), carboxylic group (CO.sub.2.sup.), phosphonic acid group (OPO.sub.3.sup.2), phosphate group (OPO.sub.3.sup.2), and sulfamic acid group (NHSO.sub.3.sup.). The pKa-reducing group is selected from the group consisting of nitro, cyano, carbonyl, trifluoromethyl, and halogen atoms. The crosslinking agent has three or four reaction sites. The polymer can be used to treat hyperkalemia.
POLYMER MEDICAMENT FOR TREATING HYPERKALEMIA AND PREPARATION METHOD THEREOF
Provided are a polymer medicament for treating hyperkalemia, and a preparation method thereof. Specifically, a polymer is provided, and the polymer includes repeating units obtained by polymerizing a monomer and a crosslinking agent. A molar ratio of the monomer to the crosslinking reagent ranges from 1:0.02 to 1:0.20. The monomer includes an acidic group and a pKa-reducing group next to the acidic group. The acidic group is selected from the group consisting of sulfonic acid group (SO.sub.3.sup.), sulfuric acid group (OSO.sub.3.sup.), carboxylic group (CO.sub.2.sup.), phosphonic acid group (OPO.sub.3.sup.2), phosphate group (OPO.sub.3.sup.2), and sulfamic acid group (NHSO.sub.3.sup.). The pKa-reducing group is selected from the group consisting of nitro, cyano, carbonyl, trifluoromethyl, and halogen atoms. The crosslinking agent has three or four reaction sites. The polymer can be used to treat hyperkalemia.