A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R.sup.1 represents a C1 to C30 divalent group; each of R.sup.2 to R.sup.7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R.sup.5 is a hydroxyl group or a thiol group; each of m.sup.2, m.sup.3, and m.sup.6 is an integer of 0 to 9; each of m.sup.4 and m.sup.7 is an integer of 0 to 8; m.sup.5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p.sup.2 to p.sup.7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q.sup.1 represents a single bond or an m.sup.12-valent organic group; each of R.sup.12 and R.sup.15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R.sup.13 and R.sup.16 represents a hydrogen atom or a methyl group; each of R.sup.14 and R.sup.17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group; n.sup.12 is an integer of 1 to 3; n.sup.13 is an integer of 2 to 5; n.sup.14 is an integer of 0 to 3; n.sup.15 is an integer of 0 to 3, with these ns having a relationship of 3(n.sup.12+n.sup.13+n.sup.14+n.sup.15)6; n.sup.16 is an integer of 1 to 3; n.sup.17 is an integer of 1 to 4; n.sup.18 is an integer of 0 to 3; n.sup.19 is an integer of 0 to 3, with these ns having a relationship of 2(n.sup.16+n.sup.17+n.sup.18+n.sup.19)5; and m.sup.12 is an integer of 2 to 10).

The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

A resist composition comprising one or more tannin compounds selected from the group consisting of a tannin comprising at least one crosslinking reactive group in the structure and a derivative thereof, and a resin obtained using the tannin or the derivative as a monomer.

A resist composition comprising one or more tannin compounds selected from the group consisting of a tannin comprising at least one crosslinking reactive group in the structure and a derivative thereof, and a resin obtained using the tannin or the derivative as a monomer.

A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R.sup.1 and R.sup.2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R.sup.1 and R.sup.2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R.sup.1 and R.sup.2 bond.

##STR00001##

A non-crosslinked, gelled carbonaceous composition and a pyrolyzed composition respectively forming an aqueous polymer gel and the pyrolysate thereof in the form of porous carbon is provided. Also provided is a production method thereof, to a porous carbon electrode formed by the pyrolyzed composition, and to a supercapacitor containing the electrodes. The gelled, non-crosslinked composition (G2) is based on a resin created at least partly from polyhydroxybenzene(s) R and formaldehyde(s) F and comprises at least one hydrosoluble cationic polyelectrolyte P. The composition forms a rheofluidifying physical gel. A pyrolyzed carbonaceous composition having a carbon monolith, is the product of coating, crosslinking, drying then pyrolysis of the non-crosslinked gelled composition, the carbon monolith being predominantly microporous and able to form a supercapacitor electrode having a thickness of less than 1 mm.

A method for purifying a material, the method comprising: a step of preparing a solution comprising a solvent and at least one material selected from the group consisting of a compound represented by the following formula (1A) and a resin having a structure represented by the following formula (2A); and a step of purification in which the solution is passed through a filter:

##STR00001## wherein, X represents an oxygen atom, a sulfur atom, a single bond, or non-crosslinked state; R.sup.a represents a 2n-valent group having 1 to 40 carbon atoms or a single bond; each R.sup.b independently represents one of various functional groups; each m is independently an integer of 0 to 9; n is an integer of 1 to 4; and each p is independently an integer of 0 to 2; provided that at least one R.sup.b represents a group comprising one selected from a hydroxyl group and a thiol group, and all m cannot be 0 at the same time;

##STR00002## wherein, X, R.sup.a, R.sup.b, n and p are the same as defined in the formula (1A); R.sup.c represents a single bond or an alkylene group having 1 to 40 carbon atoms; each m.sup.2 is independently an integer of 0 to 8; provided that at least one R.sup.b represents a group comprising one or more selected from a hydroxyl group and a thiol group, and all m.sup.2 cannot be 0 at the same time.

A method for purifying a material, the method comprising: a step of preparing a solution comprising a solvent and at least one material selected from the group consisting of a compound represented by the following formula (1A) and a resin having a structure represented by the following formula (2A); and a step of purification in which the solution is passed through a filter:

##STR00001## wherein, X represents an oxygen atom, a sulfur atom, a single bond, or non-crosslinked state; R.sup.a represents a 2n-valent group having 1 to 40 carbon atoms or a single bond; each R.sup.b independently represents one of various functional groups; each m is independently an integer of 0 to 9; n is an integer of 1 to 4; and each p is independently an integer of 0 to 2; provided that at least one R.sup.b represents a group comprising one selected from a hydroxyl group and a thiol group, and all m cannot be 0 at the same time;

##STR00002## wherein, X, R.sup.a, R.sup.b, n and p are the same as defined in the formula (1A); R.sup.c represents a single bond or an alkylene group having 1 to 40 carbon atoms; each m.sup.2 is independently an integer of 0 to 8; provided that at least one R.sup.b represents a group comprising one or more selected from a hydroxyl group and a thiol group, and all m.sup.2 cannot be 0 at the same time.

A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156 C., and a second solvent having a normal boiling point of no less than 156 C. and less than 300 C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.