A hydrocarbyloxydisilane according to formula (1)

Si.sub.2(OR).sub.xH.sub.6-x  (I)

wherein x is 1-5 and R is hydrocarbyl having from 1 to 10 carbon atoms, with the proviso that when x is 1, R is not methyl and when x is 3, formula (1) does not represent 1,1,2-trimethoxydisilane, and a method of making an hydrocarbyloxydisilane, the method comprising: causing the reaction of i) an hydrocarbylaminodisilane, and ii) an alcohol according to formula (II)

R.sup.2OH;  (II)

where R.sup.2 is hydrocarbyl having from 1 to 10 carbon atoms, to form a product mixture comprising the hydrocarbyloxydisilane.

A hydrocarbyloxydisilane according to formula (1)

Si.sub.2(OR).sub.xH.sub.6-x  (I)

wherein x is 1-5 and R is hydrocarbyl having from 1 to 10 carbon atoms, with the proviso that when x is 1, R is not methyl and when x is 3, formula (1) does not represent 1,1,2-trimethoxydisilane, and a method of making an hydrocarbyloxydisilane, the method comprising: causing the reaction of i) an hydrocarbylaminodisilane, and ii) an alcohol according to formula (II)

R.sup.2OH;  (II)

where R.sup.2 is hydrocarbyl having from 1 to 10 carbon atoms, to form a product mixture comprising the hydrocarbyloxydisilane.

Provided is a thermally conductive silicone composition that can be turned into a lightweight cured product superior in thermal conductivity, and is easily processable due to its low viscosity. The composition contains: (A) an organopolysiloxane having at least two alkenyl groups per each molecule; (B) an organohydrogenpolysiloxane having, per each molecule, at least two hydrogen atoms directly bonded to silicon atoms; (C) a thermally conductive filler containing magnesium oxide (20 to 40% by mass), aluminum oxide (40 to 60% by mass) and aluminum hydroxide (10 to 30% by mass); (D) a dimethylpolysiloxane with one end of the molecular chain thereof being blocked by a trialkoxy group; (E) a platinum group metal-based curing catalyst; and (F) an addition reaction control agent.

Provided is a thermally conductive silicone composition that can be turned into a lightweight cured product superior in thermal conductivity, and is easily processable due to its low viscosity. The composition contains: (A) an organopolysiloxane having at least two alkenyl groups per each molecule; (B) an organohydrogenpolysiloxane having, per each molecule, at least two hydrogen atoms directly bonded to silicon atoms; (C) a thermally conductive filler containing magnesium oxide (20 to 40% by mass), aluminum oxide (40 to 60% by mass) and aluminum hydroxide (10 to 30% by mass); (D) a dimethylpolysiloxane with one end of the molecular chain thereof being blocked by a trialkoxy group; (E) a platinum group metal-based curing catalyst; and (F) an addition reaction control agent.

A polymer compound in which a polymer chain containing a structure contributing to the inclusion of intermediate water is bound as at least a part of the organic component R group of a silsesquioxane.

A polymer compound in which a polymer chain containing a structure contributing to the inclusion of intermediate water is bound as at least a part of the organic component R group of a silsesquioxane.

Provided is a hard coat laminate having excellent abrasion resistance and heat resistance. The hard coat laminate includes: a substrate; and a base layer disposed on one main surface side of the substrate, in which the base layer contains inorganic nanoparticles, the base layer contains oxygen atoms, carbon atoms, and silicon atoms, the base layer has, on a surface side opposite to the substrate, a first region in which a compositional ratio of carbon atoms to all elements excluding hydrogen decreases as a distance from the substrate increases, in a region other than the first region of the base layer, a compositional ratio of carbon atoms to all elements excluding hydrogen is 5 atom % to 40 atom %, and a compositional ratio of carbon atoms on a surface of the first region is 1 atom % or less.

Provided is a hard coat laminate having excellent abrasion resistance and heat resistance. The hard coat laminate includes: a substrate; and a base layer disposed on one main surface side of the substrate, in which the base layer contains inorganic nanoparticles, the base layer contains oxygen atoms, carbon atoms, and silicon atoms, the base layer has, on a surface side opposite to the substrate, a first region in which a compositional ratio of carbon atoms to all elements excluding hydrogen decreases as a distance from the substrate increases, in a region other than the first region of the base layer, a compositional ratio of carbon atoms to all elements excluding hydrogen is 5 atom % to 40 atom %, and a compositional ratio of carbon atoms on a surface of the first region is 1 atom % or less.

Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.