Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device. ##STR00001## In Chemical Formula 1, Ar.sup.1 to Ar.sup.3, L.sup.1, L.sup.2, and R.sup.1 to R.sup.6 are the same as described in the detailed description.

Embodiments in accordance with the present invention encompass compositions encompassing a latent organo-ruthenium catalyst, an organo-ruthenium compound and a pyridine compound along with one or more monomers which undergo ring open metathesis polymerization (ROMP) when said composition is heated to a temperature from 80° C. to 150° C. or higher to form a substantially transparent film. Alternatively the compositions of this invention also undergo polymerization when subjected to suitable radiation. The monomers employed therein have a range of refractive index from 1.4 to 1.6 and thus these compositions can be tailored to form transparent films of varied refractive indices. The compositions of this invention further comprises inorganic nanoparticles which form transparent films and further increases the refractive indices of the compositions. Accordingly, compositions of this invention are useful in various opto-electronic applications, including as coatings, encapsulants, fillers, leveling agents, among others.

A material comprising a group of formula (I): (I) wherein: X and Y are each independently selected from S, O or Se; Ar1, Ar2, Ar3 and Ar4 are each independently an unsubstituted or a substituted benzene, an unsubstituted or a substituted 5- or 6-membered heteroaromatic group or are absent; A.sup.1 and A.sup.2 are each independently an unsubstituted or a substituted benzene, an unsubstituted or a substituted 5- or 6-membered heteroaromatic group, a non-aromatic 6-membered ring having ring atoms selected from C, N, S and O or are absent; R.sup.1 is H or a substituent; R.sup.2 and R.sup.3 are each independently H or a substituent; and * represents a point of attachment to a hydrogen or non-hydrogen substituent.

##STR00001##

Solvent-linked porous covalent organic polymers (COPs) and a method of preparing the same are described. The porous covalent organic polymers are linked by a solvent and are thus suitable for the transportation and storage of natural gas. A method of preparing the porous covalent organic polymers by conducting alkylation polymerization between an aromatic monomer and a chlorine-based solvent in the presence of a Lewis acid catalyst is described. Porous stretchable covalent organic polymers having pores with various sizes can be synthesized simply and quickly at room temperature and atmospheric pressure without a heating or purification step. The covalent organic polymers have very high natural gas storage capacity due to the flexible porous network structure thereof and thus are suitable for storage and transportation of natural gas and useful as a natural gas adsorbent.

A composition which is useful for producing a light emitting device having excellent external quantum efficiency contains two or more compounds represented by the formula (C-1) and a phosphorescent compound, in which at least one of the compounds represented by the formula (C-1) is a compound in which R.sup.C is a group represented by the formula (C′-1). ##STR00001##
Ring R.sup.1C and Ring R.sup.2C represent an aromatic hydrocarbon ring or an aromatic hetero ring. R.sup.C represents an oxygen atom, a sulfur atom or a group represented by the formula (C′-1). ##STR00002##
Ring R.sup.3C and Ring R.sup.4C represent an aromatic hydrocarbon ring or an aromatic hetero ring. R.sup.C′ represents a carbon atom, a silicon atom, a germanium atom, a tin atom or a lead atom.

The present invention relates to a novel polymer and an organic electronic device using same. In the polymer according to the present invention, a cyclic electron-donor, including thiophene, selenophene, or a combination thereof, is introduced into a central skeleton having an A-D-A structure including an electron-donor and electron-acceptor unit. Thus, the polymer has not only excellent chemical and thermal stability, but also good crystallinity. Moreover, intermolecular stacking is possible, and thus charge mobility can be maximized.

A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.

The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

A polymer and a light-emitting device employing the same are provided. The polymer includes a first repeat unit with a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification. At least one of A.sup.1, A.sup.2, and A.sup.3 is not hydrogen.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.