Patent classifications
C08G2261/212
RESIN MOLDED BODY MANUFACTURING METHOD, RESIN FILM MANUFACTURING METHOD, AND INJECTION MOLDED ARTICLE MANUFACTURING METHOD
The present invention is a method for producing a resin-formed article, the method comprising melt-forming a forming material including a hydrogenated syndiotactic crystalline dicyclopentadiene ring-opening polymer with an initial melting temperature of 260 C. or higher and a syndiotacticity higher than 90%. Thus provided is a method for producing a resin-formed article sufficiently reflecting the properties of the hydrogenated crystalline dicyclopentadiene ring-opening polymer.
RESIN MOLDED BODY, RESIN FILM, AND INJECTION MOLDED ARTICLE
The present invention is a resin formed article comprising a hydrogenated syndiotactic crystalline dicyclopentadiene ring-opening polymer with an initial melting temperature of 260 C. or higher, a melting point of lower than 280 C. and a syndiotacticity of higher than 90%, and a resin film, and an injection formed article. One aspect of the invention provides a resin formed article, a resin film and an injection formed article which sufficiently reflect the properties of the hydrogenated crystalline dicyclopentadiene ring-opening polymer.
Planarizing agents and devices
Use of certain materials in hole injection layer and/or hole transport layer can improve operational lifetimes in organic devices. Polymers having fused aromatic side groups such as polyvinylnaphthol polymers can be used in conjunction with conjugated polymers. Inks can be formulated and cast as films in organic electronic devices including OLEDs, SMOLEDs, and PLEDs. One embodiment provides a composition comprising: at least one conjugated polymer, and at least one second polymer different from the conjugated polymer comprising at least one optionally substituted fused aromatic hydrocarbon side group. The substituent can be hydroxyl. Aqueous-based inks can be formulated.
HYDROGENATED SYNDIOTACTIC CRYSTALLINE DICYCLOPENTADIENE RING-OPENING POLYMER, SYNDIOTACTIC DICYCLOPENTADIENE RING-OPENING POLYMER, AND PRODUCTION METHOD FOR THESE
The present invention provides a hydrogenated syndiotactic crystalline dicyclopentadiene ring-opening polymer having a melting point of lower than 280 C., an initial melting temperature of 260 C. or higher and a syndiotacticity of higher than 90%, and a syndiotactic dicyclopentadiene ring-opening polymer, and a method for producing the syndiotactic dicyclopentadiene ring-opening polyme, and a method for producing the hydrogenated syndiotactic crystalline dicyclopentadiene ring-opening polymer. The hydrogenated syndiotactic crystalline dicyclopentadiene ring-opening polymer has a sufficiently high initial melting temperature, excellent heat resistance and advantageous industrial producibility. The syndiotactic dicyclopentadiene ring-opening polymer is excellent in solution stability after polymerization reaction and can be converted into the hydrogenated product by hydrogenation reaction.
Solution Process for Fabricating High-performance Organic Thin-film Transistors
The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
Solution Process for Fabricating High-performance Organic Thin-film Transistors
The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
FIELD-EFFECT TRANSISTORS BASED ON MACROSCOPICALLY ORIENTED POLYMERS
Embodiments of the invention include methods and materials for preparing organic semiconducting layers, for example one used in an organic semiconductor device including a substrate with a nanostructured surface and an organic semiconductor film overlying the nanostructured surface. The semiconductor film is typically formed from macroscopically ordered polymer fibers made from selected conjugate polymer compounds. Such polymer fibers synthesized from selected conjugated polymer compounds and directionally aligned in organic semiconductor devices can provide these devices improved functional properties, including for example, unexpectedly high field effect saturation mobilities.
SEMICONDUCTING POLYMERS WITH MOBILITY APPROACHING ONE HUNDRED SQUARE CENTIMETERS PER VOLT PER SECOND
One or more embodiments of the present invention report here a comparative study of field effect transistors (FETs) fabricated with semiconducting polymer PBT, regioregular semiconducting polymers, PCDTPT and their fluorinated analogue (P2F, PCDTFBT), in the transistor channel. The present invention shows that simple fluorination of PBT and PCDTPT to PCDTFBT leads to air-stability and reliable transistor characteristics. The FETs fabricated from aligned PCDTFBT yielded stable threshold voltages (at zero volt) and a narrow distribution of saturation hole mobilities of 65 cm.sup.2 V.sup.1 s.sup.1 (average over 50 independent FET devices). At higher source-drain voltage (higher electric field in the channel) the mobility approaches 100 cm.sup.2 V.sup.1 s.sup.1, the highest value for semiconducting polymers reported to date. High mobility is retained over 150 hours in ambient air without any encapsulation layers. The results obtained in one or more embodiments of the invention represent important progress for solution-processed plastic transistors, and provide molecular design guidelines for high-mobility and air-stable conjugated polymers.
FLUORINE SUBSTITUTION INFLUENCE ON BENZO[2,1,3]THIODIAZOLE BASED POLYMERS FOR FIELD-EFFECT TRANSISTOR APPLICATIONS
Four conjugated copolymers with a donor/acceptor architecture comprising 4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b]dithiophene as the donor structural unit and benzo[2,1,3]thiodiazole fragments with varying degrees of fluorination have been synthesized and characterized. It has been shown that the HOMO levels were decreased after the fluorine substitution. The field-effect charge carrier mobility was similar for all polymers with less than an order of magnitude difference between different acceptor units.
DOPING-INDUCED CARRIER DENSITY MODULATION IN POLYMER FIELD-EFFECT TRANSISTORS
A method of fabricating an organic field effect transistor (OFET), including forming a source contact, a drain contact, and a gate connection to a channel comprising semiconducting polymers, wherein the gate connection applies a field to the semiconductor polymers across a dielectric layer to modulate conduction along the semiconducting polymers between the source contact and the drain contact; and treating the semiconducting polymers, wherein the treating includes a chemical treatment that controls a carrier density, carrier mobility, threshold voltage, and/or contact resistance of the OFET.