The disclosure provides a film composition, wherein the film composition includes an oligomer and a crosslinking agent. The oligomer can have a structure represented by Formula (I) ##STR00001##
wherein R.sup.1 and R.sup.2 are independently hydrogen, C.sub.1-20 alkyl group, C.sub.2-20 alkenyl group, C.sub.6-12 aryl group, C.sub.6-12 alkylaryl group, C.sub.5-12 cycloalkyl group, C.sub.6-20 cycloalkylalkyl group, alkoxycarbonyl group, or alkylcarbonyloxy group; R.sup.1 is not hydrogen when R.sup.2 is hydrogen; a is 0 or 1; 100n1; 100m1; and when n is not 0, the ratio of n to m is from 3:1 to 1:4. The weight ratio of the oligomer and the crosslinking agent can be from 9:1 to 3:7. The oligomer has a number average molecular weight (Mn) from 1,000 to 8,000.

The polymerization of cycloalkenamer is stopped by adding an alkyl vinyl derivative. Subsequently compound A is added, wherein compound A has at least one of the features i) or ii): i) at least one functional group or ii) at least one saturated or unsaturated aliphatic or aromatic heterocyclic ring having 3 to 14 ring atoms, wherein the ring atoms contain at least one carbon atom and at least one atom selected from oxygen, nitrogen and sulfur. A membrane filtration is subsequently carried out. This type of production produces polyalkenamers which are temperature-stable at 180 C.

A curable composition comprises an addition polymerizable cycloolefin comprising a ring containing a single car-bon-carbon double bond; an addition polymerization catalyst; and at least one of hollow glass microspheres, expanded polymeric mi-crospheres, or expandable polymeric microspheres. The curable composition may be 1-part or 2-part. Methods of curing the curable composition are disclosed. Cured compositions, and articles including the same are also disclosed.

Provided is a charge-transporting composition that contains: a charge-transporting substance comprising a polythiophene derivative represented by formula (1); a fluorine-based surfactant; metal oxide nanoparticles; and a solvent.

##STR00001##

(R.sup.1 and R.sup.2 are each independently a hydrogen atom, an alkoxy group having 1-40 carbon atoms, O[ZO].sub.pR.sup.e, a sulfonic acid group, or the like, or R.sup.1 and R.sup.2 bond to each other to form OYO. Y is an alkylene group having 1-40 carbon atoms, which may contain an ether bond and which may be substituted with a sulfonic acid group. Z is an alkylene group having 1-40 carbon atoms, which may be substituted with a halogen atom. p is 1 or more, and R.sup.e is a hydrogen atom, an alkyl group having a 1-40 carbon atoms, or the like.)

The present disclosure provides a semiconductor compound, which includes a metal complex unit and a conjugate unit. The metal complex unit includes a coordination center and a plurality of ligands. The coordination center is a metal ion or a metal atom, and the ligands are linked with the coordination center. The conjugate unit is linked with the metal complex unit by covalent bond.

Disclosed is a hydrogenated norbornene ring-opened polymer, wherein a proportion of a norbornene-derived repeating unit is 90% by mass or more, a meso diad fraction of the norbornene-derived repeating unit is 80% or more, and in an X-ray diffraction pattern measured at 25 C. using a CuK radiation source, an X-ray diffraction peak is observed which has a peak top positioned in a diffraction angle (2) range of 17 or more and 18 or less.

A resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film wherein the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Described herein are anionic phenylene oligomers and polymers, and devices including these materials. The oligomers and polymers can be prepared in a convenient and well-controlled manner, and can be used in cation exchange 5 membranes. Also described is the controlled synthesis of anionic phenylene monomers and their use in synthesizing anionic oligomers and polymers, with precise control of the position and number of anionic groups.

The present invention relates to a method for the polymerization of cycloolefins by ring-opening metathesis. The reaction is carried out in the presence of at least one particular catalyst, selected from the ruthenium alkylidene complexes comprising at least one 1-aryl-3-cycloalkyl-imidazolin-2-ylidene ligand and mixtures thereof. The invention also relates to a kit for implementing this method.

Provided are a methacrylic resin having high heat resistance, highly controlled birefringence, and excellent color tone and transparency, and a production method, a molded article, and an optical or automotive component of the methacrylic resin. The methacrylic resin includes N-substituted maleimide monomer-derived structural units (B) in a main chain thereof in a proportion of 5 mass % to 40 mass %. The N-substituted maleimide monomer-derived structural units (B) include a structural unit represented by formula (1). The methacrylic resin has a glass transition temperature of higher than 120 C. and not higher than 160 C. The content of components that exhibit light absorption at a wavelength of 400 nm in methanol-soluble content of the methacrylic resin is more than 0 mass % and not more than 2 mass % as calculated in terms of N-phenylmaleimide.