A sheet or blank is provided which includes a substrate and pre-coating on at least one face of the substrate. A polymerized layer overlies at least a part of the pre-coating and has a thickness from 2 m to 30 m, a nitrogen content of less than 1% by weight, carbon pigments in a quantity from 3 to 30% by weight and does not include a polymer with silicon. A welded blank, part and fabrication methods are also provided.

A sheet or blank is provided which includes a substrate and pre-coating on at least one face of the substrate. A polymerized layer overlies at least a part of the pre-coating and has a thickness from 2 m to 30 m, a nitrogen content of less than 1% by weight, carbon pigments in a quantity from 3 to 30% by weight and does not include a polymer with silicon. A welded blank, part and fabrication methods are also provided.

A composite product includes a solid wood component and a coating layer on at least one side of the solid wood component. The at least one side of the solid wood component has a wood grain. The coating layer includes at least one thermoplastic polymer and non-spherical pigment particles distributed within the coating layer. The coating layer has a surface pattern at least partly mimicking the wood grain.

A composite product includes a solid wood component and a coating layer on at least one side of the solid wood component. The at least one side of the solid wood component has a wood grain. The coating layer includes at least one thermoplastic polymer and non-spherical pigment particles distributed within the coating layer. The coating layer has a surface pattern at least partly mimicking the wood grain.

The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

Polymeric compositions having a slip agent comprising a silicone and a fatty acid amide. Such polymeric compositions can exhibit lower coefficients of friction when compared to polymeric compositions containing either silicone or fatty acid amide alone. Such polymeric compositions are suitable for use in various articles of manufacture, including, for example, wire and cable jackets.

Polymeric compositions having a slip agent comprising a silicone and a fatty acid amide. Such polymeric compositions can exhibit lower coefficients of friction when compared to polymeric compositions containing either silicone or fatty acid amide alone. Such polymeric compositions are suitable for use in various articles of manufacture, including, for example, wire and cable jackets.

Polymeric compositions having a slip agent comprising a silicone and a fatty acid amide. Such polymeric compositions can exhibit lower coefficients of friction when compared to polymeric compositions containing either silicone or fatty acid amide alone. Such polymeric compositions are suitable for use in various articles of manufacture, including, for example, wire and cable jackets.