A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R.sup.1 represents a C1 to C30 divalent group; each of R.sup.2 to R.sup.7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R.sup.5 is a hydroxyl group or a thiol group; each of m.sup.2, m.sup.3, and m.sup.6 is an integer of 0 to 9; each of m.sup.4 and m.sup.7 is an integer of 0 to 8; m.sup.5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p.sup.2 to p.sup.7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q.sup.1 represents a single bond or an m.sup.12-valent organic group; each of R.sup.12 and R.sup.15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R.sup.13 and R.sup.16 represents a hydrogen atom or a methyl group; each of R.sup.14 and R.sup.17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group; n.sup.12 is an integer of 1 to 3; n.sup.13 is an integer of 2 to 5; n.sup.14 is an integer of 0 to 3; n.sup.15 is an integer of 0 to 3, with these ns having a relationship of 3(n.sup.12+n.sup.13+n.sup.14+n.sup.15)6; n.sup.16 is an integer of 1 to 3; n.sup.17 is an integer of 1 to 4; n.sup.18 is an integer of 0 to 3; n.sup.19 is an integer of 0 to 3, with these ns having a relationship of 2(n.sup.16+n.sup.17+n.sup.18+n.sup.19)5; and m.sup.12 is an integer of 2 to 10).

A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R.sup.1 represents a C1 to C30 divalent group; each of R.sup.2 to R.sup.7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R.sup.5 is a hydroxyl group or a thiol group; each of m.sup.2, m.sup.3, and m.sup.6 is an integer of 0 to 9; each of m.sup.4 and m.sup.7 is an integer of 0 to 8; m.sup.5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p.sup.2 to p.sup.7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q.sup.1 represents a single bond or an m.sup.12-valent organic group; each of R.sup.12 and R.sup.15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R.sup.13 and R.sup.16 represents a hydrogen atom or a methyl group; each of R.sup.14 and R.sup.17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group; n.sup.12 is an integer of 1 to 3; n.sup.13 is an integer of 2 to 5; n.sup.14 is an integer of 0 to 3; n.sup.15 is an integer of 0 to 3, with these ns having a relationship of 3(n.sup.12+n.sup.13+n.sup.14+n.sup.15)6; n.sup.16 is an integer of 1 to 3; n.sup.17 is an integer of 1 to 4; n.sup.18 is an integer of 0 to 3; n.sup.19 is an integer of 0 to 3, with these ns having a relationship of 2(n.sup.16+n.sup.17+n.sup.18+n.sup.19)5; and m.sup.12 is an integer of 2 to 10).

One embodiment of the present invention provides a rubber reinforcement material which comprises a fiber substrate, an adhesive layer disposed on the fiber substrate, a rubber compound layer disposed on the adhesive layer, and resorcinol-formaldehyde-latex (RFL), wherein the rubber compound layer has a thickness of 5 m to 200 m.

One embodiment of the present invention provides a rubber reinforcement material which comprises a fiber substrate, an adhesive layer disposed on the fiber substrate, a rubber compound layer disposed on the adhesive layer, and resorcinol-formaldehyde-latex (RFL), wherein the rubber compound layer has a thickness of 5 m to 200 m.

There is provided a novel resist underlayer film forming composition comprising a polymer having a repeating structural unit of formula (1a) and/or (1b): ##STR00001##
[wherein two R.sup.1s are each independently a C.sub.1-10 alkyl group, a C.sub.2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R.sup.2s are each independently a hydrogen atom, a C.sub.1-10 alkyl group, a C.sub.2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R.sup.3 is an aromatic hydrocarbon group optionally having a substituent or a heterocyclic group, R.sup.4 is a hydrogen atom, a phenyl group, or a naphthyl group, two ks are each independently 0 or 1, m is an integer of 3 to 500, p is an integer of 3 to 500, X is a benzene ring, and two C(CH.sub.3).sub.2 groups bonded to the benzene ring are in a meta position or a para position], and a solvent.

This invention relates to improved adhesion compositions and textile materials and articles treated therewith. The improved adhesion composition comprises a non-crosslinked resorcinol-formaldehyde and/or resorcinol-furfural condensate (or a phenol-formaldehyde condensate that is soluble in water), a rubber latex, and an aldehyde component such as 2-furfuraldehyde. The composition may be applied to textile substrates and used for improving the adhesion between the treated textile substrates and rubber materials. End-use articles that contain the treated textile-rubber composite include, without limitation, automobile tires, belts, and hoses as well as printing blankets.

This invention relates to improved adhesion compositions and textile materials and articles treated therewith. The improved adhesion composition comprises a non-crosslinked resorcinol-formaldehyde and/or resorcinol-furfural condensate (or a phenol-formaldehyde condensate that is soluble in water), a rubber latex, and an aldehyde component such as 2-furfuraldehyde. The composition may be applied to textile substrates and used for improving the adhesion between the treated textile substrates and rubber materials. End-use articles that contain the treated textile-rubber composite include, without limitation, automobile tires, belts, and hoses as well as printing blankets.

A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156 C., and a second solvent having a normal boiling point of no less than 156 C. and less than 300 C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156 C., and a second solvent having a normal boiling point of no less than 156 C. and less than 300 C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.