A polishing pad sheet which provides optimized interfacial properties for the laminated structure of a polishing pad based on appropriate elasticity and high durability, and in which the polishing pad having the polishing pad sheet applied thereto not only has its intrinsic function such as the polishing rate or the like, but also is capable of realizing the function without damage even during the polishing process in a wet environment for a long time, and a polishing pad to which the polishing pad sheet is applied. The polishing pad sheet includes: a first surface which is a polishing layer attachment surface; and a second surface which is a rear surface of the first surface, wherein the first surface has a value of the following Equation 1 of 4.20 to 5.50: 4.20≤(|Sv|)/Sz×P (%)≤5.50.

The present invention is a planarizing agent for forming an organic film, including an aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein a blended composition that includes the planarizing agent and a preliminary composition containing an organic film-forming resin and a solvent, and having a complex viscosity of 1.0 Pa.Math.s or more in a temperature range of 175° C. or higher has a temperature range in which a complex viscosity of the blended composition is less than 1.0 Pa.Math.s in a temperature range of 175° C. or higher. This provides a planarizing agent for forming an organic film to yield a composition for forming an organic film having a high planarizing ability; a composition for forming an organic film containing this planarizing agent; a method for forming an organic film using this composition; and a patterning process.

The present invention is a planarizing agent for forming an organic film, including an aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein a blended composition that includes the planarizing agent and a preliminary composition containing an organic film-forming resin and a solvent, and having a complex viscosity of 1.0 Pa.Math.s or more in a temperature range of 175° C. or higher has a temperature range in which a complex viscosity of the blended composition is less than 1.0 Pa.Math.s in a temperature range of 175° C. or higher. This provides a planarizing agent for forming an organic film to yield a composition for forming an organic film having a high planarizing ability; a composition for forming an organic film containing this planarizing agent; a method for forming an organic film using this composition; and a patterning process.

A method of fabricating a polishing pad using an additive manufacturing system includes depositing a first set successive layers by droplet ejection to form a. Depositing the successive layers includes dispensing a polishing pad precursor to first regions corresponding to partitions of the polishing pad and dispensing a sacrificial material to second regions corresponding to grooves of the polishing pad. Removing the sacrificial material provides the polishing pad with a polishing surface that has the partitions separated by the grooves.

A method of fabricating a polishing pad using an additive manufacturing system includes depositing a first set successive layers by droplet ejection to form a. Depositing the successive layers includes dispensing a polishing pad precursor to first regions corresponding to partitions of the polishing pad and dispensing a sacrificial material to second regions corresponding to grooves of the polishing pad. Removing the sacrificial material provides the polishing pad with a polishing surface that has the partitions separated by the grooves.

The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.

The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.

A polishing pad, a polyurethane polishing layer and a preparation method thereof are provided, belonging to the technical field of polishing in chemical-mechanical planarization treatment. The polyurethane polishing layer having a coefficient of thermal expansion of 100-200 ppm/° C. comprises a reaction product produced by reacting of multiple components. The multiple components include an isocyanate-terminated prepolymer, a hollow microsphere polymer and a curing agent composition. The curing agent composition includes 5-55 wt % of an aliphatic diamine composition, 0-8 wt % of a polyamine composition and 40-90 wt % of an aromatic bifunctional composition. The polyurethane polishing layer has a density of 0.6-1.1 g/cm.sup.3, a Shore hardness of 45-70D and an elongation at break of 50-450%. The polyurethane polishing layer is prepared by a simple process with low cost and energy consumption. The polyurethane polishing layer prepared by the process has a high hydrolytic stability, a uniform density and a stable removal rate.

A polishing pad, a polyurethane polishing layer and a preparation method thereof are provided, belonging to the technical field of polishing in chemical-mechanical planarization treatment. The polyurethane polishing layer having a coefficient of thermal expansion of 100-200 ppm/° C. comprises a reaction product produced by reacting of multiple components. The multiple components include an isocyanate-terminated prepolymer, a hollow microsphere polymer and a curing agent composition. The curing agent composition includes 5-55 wt % of an aliphatic diamine composition, 0-8 wt % of a polyamine composition and 40-90 wt % of an aromatic bifunctional composition. The polyurethane polishing layer has a density of 0.6-1.1 g/cm.sup.3, a Shore hardness of 45-70D and an elongation at break of 50-450%. The polyurethane polishing layer is prepared by a simple process with low cost and energy consumption. The polyurethane polishing layer prepared by the process has a high hydrolytic stability, a uniform density and a stable removal rate.

The present invention is a polishing composition, containing zirconium oxide as abrasive grains, the polishing composition having pH of 11.0 or more and less than 12.5, the zirconium oxide having element concentrations of sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, manganese, nickel, copper, zinc, lead, and cobalt of less than 1 ppm each. There can be provided a polishing composition that enables semiconductor substrates having high flatness not only in the inner circumferential portion but also in the outer circumferential portion with little contamination due to metal impurities to be obtained at high productivity.