A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 μS/cm or more, and a pH is 2 to 4.

An acrylic polymer comprising from 3 to 17 wt % polymerized units of carboxylic acid monomer. The polymer is at least partially neutralized with an amino alcohol having a primary amino group.

A method of fabricating a polishing pad using an additive manufacturing system includes depositing successive layers by droplet ejection to form the polishing pad. The polishing pad includes a polishing surface having one or more partitions separated by one or more grooves. Depositing a layer of the successive layers includes dispensing first regions corresponding to edges of the one or more partitions by a first droplet ejection process. After curing the first regions, a second region corresponding to interior of the one or more partitions is dispensed between the edges by a different second droplet ejection process.

A method of fabricating a polishing pad using an additive manufacturing system includes depositing successive layers by droplet ejection to form the polishing pad. The polishing pad includes a polishing surface having one or more partitions separated by one or more grooves. Depositing a layer of the successive layers includes dispensing first regions corresponding to edges of the one or more partitions by a first droplet ejection process. After curing the first regions, a second region corresponding to interior of the one or more partitions is dispensed between the edges by a different second droplet ejection process.

A polishing composition is provided that is capable of quickly removing oxide film even with lower abrasive concentration. A polishing composition includes: silica with a silanol group density of 2.0 OH/nm.sup.2 or higher; and an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group, the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof. However, the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.

A polishing composition is provided that is capable of quickly removing oxide film even with lower abrasive concentration. A polishing composition includes: silica with a silanol group density of 2.0 OH/nm.sup.2 or higher; and an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group, the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof. However, the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.

A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks are according to the general formula: ##STR00001##
wherein R.sub.1, R.sub.2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons.

A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks are according to the general formula: ##STR00001##
wherein R.sub.1, R.sub.2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons.