A method of fabricating a polishing pad using an additive manufacturing system includes depositing a first set successive layers by droplet ejection to form a. Depositing the successive layers includes dispensing a polishing pad precursor to first regions corresponding to partitions of the polishing pad and dispensing a sacrificial material to second regions corresponding to grooves of the polishing pad. Removing the sacrificial material provides the polishing pad with a polishing surface that has the partitions separated by the grooves.

A method of fabricating a polishing pad using an additive manufacturing system includes depositing a first set successive layers by droplet ejection to form a. Depositing the successive layers includes dispensing a polishing pad precursor to first regions corresponding to partitions of the polishing pad and dispensing a sacrificial material to second regions corresponding to grooves of the polishing pad. Removing the sacrificial material provides the polishing pad with a polishing surface that has the partitions separated by the grooves.

Use of dry electrolytes to polish metal surfaces through ion transport. A conductive liquid of the dry electrolyte includes at least a sulfonic acid. According to one embodiment, the porous particles of the dry electrolyte include sulfonate polymer, such as, polystyrene divinylbenzene. According to one embodiment, the conductive liquid of the dry electrolyte includes methane-sulfonic acid. Preferably, the concentration of the sulfonic acid in relation to the solvent is ranging from 1 to 70%. Optionally, the conductive liquid of the dry electrolyte includes a complexing agent and/or a chelating agent.

Use of dry electrolytes to polish metal surfaces through ion transport. A conductive liquid of the dry electrolyte includes at least a sulfonic acid. According to one embodiment, the porous particles of the dry electrolyte include sulfonate polymer, such as, polystyrene divinylbenzene. According to one embodiment, the conductive liquid of the dry electrolyte includes methane-sulfonic acid. Preferably, the concentration of the sulfonic acid in relation to the solvent is ranging from 1 to 70%. Optionally, the conductive liquid of the dry electrolyte includes a complexing agent and/or a chelating agent.

Disclosed is a polishing fluid for improving surfaces formed by fused deposition molding with ABS, consisting of 30%-40% by weight of polymethyl methacrylate and 60%-70% by weight of a mixture. This application further discloses a method of preparing the polishing fluid by mixing under heating. The polishing fluid provided herein can quickly form a film on surfaces of the workpiece to be processed and fill depressions of the surfaces of the workpiece while dissolving the protrusions on the surfaces to render the surfaces smooth and even.

Disclosed is a polishing fluid for improving surfaces formed by fused deposition molding with ABS, consisting of 30%-40% by weight of polymethyl methacrylate and 60%-70% by weight of a mixture. This application further discloses a method of preparing the polishing fluid by mixing under heating. The polishing fluid provided herein can quickly form a film on surfaces of the workpiece to be processed and fill depressions of the surfaces of the workpiece while dissolving the protrusions on the surfaces to render the surfaces smooth and even.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of less than about 6 meq/g.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.