A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 S/cm or more, and a pH is 2 to 4.

Embodiments provide a polishing composition containing colloidal silica, pulverized wet-process silica particles, and a water-soluble polymer compound. According to at leaset one embodiment, the water-soluble polymer compound is a copolymer containing a structural unit derived from an unsaturated aliphatic carboxylic acid and a structural unit derived from an unsaturated amide.

Embodiments provide a polishing composition containing colloidal silica, pulverized wet-process silica particles, and a water-soluble polymer compound. According to at leaset one embodiment, the water-soluble polymer compound is a copolymer containing a structural unit derived from an unsaturated aliphatic carboxylic acid and a structural unit derived from an unsaturated amide.

A polishing pad, a polyurethane polishing layer and a preparation method thereof are provided, belonging to the technical field of polishing in chemical-mechanical planarization treatment. The polyurethane polishing layer having a coefficient of thermal expansion of 100-200 ppm/ C. comprises a reaction product produced by reacting of multiple components. The multiple components include an isocyanate-terminated prepolymer, a hollow microsphere polymer and a curing agent composition. The curing agent composition includes 5-55 wt % of an aliphatic diamine composition, 0-8 wt % of a polyamine composition and 40-90 wt % of an aromatic bifunctional composition. The polyurethane polishing layer has a density of 0.6-1.1 g/cm.sup.3, a Shore hardness of 45-70D and an elongation at break of 50-450%. The polyurethane polishing layer is prepared by a simple process with low cost and energy consumption. The polyurethane polishing layer prepared by the process has a high hydrolytic stability, a uniform density and a stable removal rate.

A polishing pad, a polyurethane polishing layer and a preparation method thereof are provided, belonging to the technical field of polishing in chemical-mechanical planarization treatment. The polyurethane polishing layer having a coefficient of thermal expansion of 100-200 ppm/ C. comprises a reaction product produced by reacting of multiple components. The multiple components include an isocyanate-terminated prepolymer, a hollow microsphere polymer and a curing agent composition. The curing agent composition includes 5-55 wt % of an aliphatic diamine composition, 0-8 wt % of a polyamine composition and 40-90 wt % of an aromatic bifunctional composition. The polyurethane polishing layer has a density of 0.6-1.1 g/cm.sup.3, a Shore hardness of 45-70D and an elongation at break of 50-450%. The polyurethane polishing layer is prepared by a simple process with low cost and energy consumption. The polyurethane polishing layer prepared by the process has a high hydrolytic stability, a uniform density and a stable removal rate.

The present invention relates to a method for polishing an insulating film of a semiconductor element, the method comprising polishing an insulating film, which is formed by embedding conductive patterns formed on a substrate, with a polishing slurry composition comprising a polishing agent including cerium oxide particles and an anionic dispersant, and a polishing additive composition comprising an anionic polymer, a cationic compound, a nonionic surfactant, a dishing inhibitor, and an amphoteric ionic compound, wherein the anionic polymer has a polymer distribution index (PDI) of 3.5 to 5.5, to remove a step associated with the insulating film.

The present invention relates to a method for polishing an insulating film of a semiconductor element, the method comprising polishing an insulating film, which is formed by embedding conductive patterns formed on a substrate, with a polishing slurry composition comprising a polishing agent including cerium oxide particles and an anionic dispersant, and a polishing additive composition comprising an anionic polymer, a cationic compound, a nonionic surfactant, a dishing inhibitor, and an amphoteric ionic compound, wherein the anionic polymer has a polymer distribution index (PDI) of 3.5 to 5.5, to remove a step associated with the insulating film.

The present invention relates to a polishing agent including: metal oxide particles; an organic acid having a monodentate ligand; a nonionic polymer; and water, in which the polishing agent has a pH of from 3.0 to 7.0, and the nonionic polymer includes at least one selected from the group consisting of polyglycerin, polyoxyethylene polyglyceryl ether and polyoxypropylene polyglyceryl ether.

The present invention relates to a polishing agent including: metal oxide particles; an organic acid having a monodentate ligand; a nonionic polymer; and water, in which the polishing agent has a pH of from 3.0 to 7.0, and the nonionic polymer includes at least one selected from the group consisting of polyglycerin, polyoxyethylene polyglyceryl ether and polyoxypropylene polyglyceryl ether.

An object of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished.

A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, a carboxylic acid (salt) group, and an amino group, and water, wherein the pH value is less than 7, and the polymer compound has a pKa of 3 or less, and a weight average molecular weight of 3,500 or more and 100,000 or less.