Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.

A polishing composition is provided that is capable of quickly removing oxide film even with lower abrasive concentration. A polishing composition includes: silica with a silanol group density of 2.0 OH/nm.sup.2 or higher; and an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group, the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof. However, the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.

A polishing composition is provided that is capable of quickly removing oxide film even with lower abrasive concentration. A polishing composition includes: silica with a silanol group density of 2.0 OH/nm.sup.2 or higher; and an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group, the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof. However, the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.

Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

A polishing slurry including a fullerene derivative and at least one compound having at least one positively-charged functional group, and a method of manufacturing a semiconductor device using the polishing slurry.

Use of dry electrolytes to polish metal surfaces through ion transport. A conductive liquid of the dry electrolyte includes at least a sulfonic acid. According to one embodiment, the porous particles of the dry electrolyte include sulfonate polymer, such as, polystyrene divinylbenzene. According to one embodiment, the conductive liquid of the dry electrolyte includes methane-sulfonic acid. Preferably, the concentration of the sulfonic acid in relation to the solvent is ranging from 1 to 70%. Optionally, the conductive liquid of the dry electrolyte includes a complexing agent and/or a chelating agent.

Use of dry electrolytes to polish metal surfaces through ion transport. A conductive liquid of the dry electrolyte includes at least a sulfonic acid. According to one embodiment, the porous particles of the dry electrolyte include sulfonate polymer, such as, polystyrene divinylbenzene. According to one embodiment, the conductive liquid of the dry electrolyte includes methane-sulfonic acid. Preferably, the concentration of the sulfonic acid in relation to the solvent is ranging from 1 to 70%. Optionally, the conductive liquid of the dry electrolyte includes a complexing agent and/or a chelating agent.