The present invention relates to a slurry composition for polishing an organic film, and the slurry composition for polishing an organic film according to one embodiment of the present invention comprises: abrasive particles; a polishing control agent containing an organic acid, an inorganic acid, or both; an organic film polishing enhancer containing an amide compound or an amide polymer; an oxidizing agent; and a pH control agent.

A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

A portable wet sand blasting device or a portable wet sand blaster with a specially designed and shaped hand truck tank with an inclined side, wheels, axle, base feet, and a handle to allow the heavy device to be more easily moved from job to job. The specially designed and shaped hand truck tank includes a special pump and special internal plumbing and mixing outputs that provide optimum water and abrasive slurry mixing wherein sufficient slurry mixing is required for the effective use of a wet sand blasting device.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

Modified silanized colloidal silica particles are reaction products of silanized colloidal silica particles having epoxy moieties with nitrogen of amines to form stable and tunable modified silanized colloidal silica particles. The modified silanized colloidal silica particles can be used as an abrasive in chemical mechanical polishing of various substrates.

The present disclosure relates to an abrasive article construction containing an anti-loading composition which significantly reduces loading, is coatable, is durable, and is relatively inexpensive to manufacture. In particular, the use of the anti-loading compositions of the present disclosure as a size coat at least reduces if not eliminates the need for a supersize coat, while offering comparable if not superior performance and durability. In one aspect, the present disclosure provides an abrasive article including a backing with a first major surface and an opposing second major surface, an abrasive layer bonded to at least a portion of the first major surface, with the abrasive layer comprising abrasive particles retained in a make coat. The abrasive article further includes an anti-loading size layer comprising a size coat binder and wax at least partially disposed on the abrasive layer and also includes a blocked acid catalyst.

A polishing composition according to the present invention contains zirconia particles, a selectivity improver for improving a ratio of a polishing speed for an organic material (b) to a polishing speed for a material (a) having a metal-nitrogen bond, and a dispersing medium, wherein in a particle size distribution of the zirconia particles obtained by a laser diffraction/scattering method, a diameter (D50) of the particles when a cumulative volume of the particles from a fine particle side reaches 50% of a total volume of the particles is 5 nm or more and 150 nm or less, and a pH of the polishing composition is less than 7.

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

Provided are improved slurry compositions useful in the CMP polishing of glass and other dielectric materials. In one aspect, the compositions of the invention are comprised of water; silica abrasive; a cationic surfactant; and ceria abrasive. The compositions effect a high removal rate while limiting the number of scratches typically observed when utilizing ceria alone.