To provide a technique with which in a case where sulfonic acid-modified aqueous anionic sol is used as abrasive grain, in a polishing composition for polishing an object to be polished that contains SiN, the stability of the SiN polishing rate with time can be improved, and the content of hydrogen peroxide can be decreased.

In a polishing composition having a pH of 6 or less, sulfonic acid-modified colloidal silica obtained by immobilizing sulfonic acid on surfaces of silica particles, and water are allowed to be contained, at this time, as the sulfonic acid-modified colloidal silica, the one derived from sulfonic acid-modified aqueous anionic silica sol produced by a production method including a first reaction step of obtaining a reactant by heating raw colloidal silica having a number distribution ratio of 10% or less of microparticles having a particle diameter of 40% or less relative to a volume average particle diameter based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope in the presence of a silane coupling agent having a functional group chemically convertible to a sulfonic acid group; and a second reaction step of converting the functional group to a sulfonic acid group by treating the reactant is used.

Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.

An aspect of the present disclosure provides a CMP polishing liquid for polishing polysilicon, the CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer includes at least one selected from the group consisting of a polymer A having a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom and an allylamine polymer B. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid.

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.

Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C.sub.5-C.sub.20-alkyl, C.sub.5-C.sub.20-alkenyl, C.sub.5-C.sub.20-alkylacyl or C.sub.5-C.sub.20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions have excellent heat aging and shelf stability in the form of concentrates comprising a mixture of a compound containing two quaternary ammonium groups, such as hexabutyl C.sub.1-C.sub.8 alkanediammonium dihydroxides or salts thereof, preferably N,N,N,N′,N′,N′-hexabutyl-1,4-butanediammonium dihydroxide (HBBAH), and aminosilane group containing silica particles in the amount of from 1 to 30 wt. % or, preferably, from 15 to 22 wt. %, as solids based on the total weight of the composition, the composition having a pH ranging from 3 to 5 or, preferably, from 3.5 to 4.5 wherein the composition is stable against visible precipitation or sedimentation at a 15 wt. % solids content after heat aging at a temperature of 45° C. for at least 6 days.

The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.