The present invention is objected to polish the surface of the object material with a high quality at a high polishing rate. The object surface is polished using a wet polishing method. Slurry is produced by scattering abrasive particles into pure water. In the abrasive particle, where components which has a mechanochemical effect and which reacts to the friction heat generated in polishing the object material are joined with each other and integrated to a particle. There, respective component is joined with each other using a mechanical alloying process, while maintaining the inherent material properties. When the slurry is used in a lapping process of sapphire, silicon carbide, gallium nitride and the like, the polishing process can be substantially shortened and the processing cost is drastically reduced. Further, it secures a high quality of the polishing surface. The abrasive particle can be used repeatedly in the polishing process. Since the pH value of the slurry is around 3 to 9, it does not deteriorate working environment and the liquid-waste treatment is easy.

A 3D magnetorheological polishing device and a magnetorheological polishing fluid are provided. The 3D magnetorheological polishing device includes a container and a magnetic field generator. The container is disposed with an accommodation space to accommodate a polishing fluid and a workpiece that is to be polished. The container is disposed on the magnetic field generator and rotates synchronously with the magnetic field generator. The container and the magnetic field generator are capable of rotating in conjunction at a predetermined speed, such that the polishing efficiency is improved.

The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Compositions containing 2,3,3,3-tetrafluoropropene and 1,2-difluoroethylene, that can be used in multiple fields of application. The composition can include from 45 to 90 mol % of 2,3,3,3-tetrafluoropropene and from 55 to 10 mol % of, 1,2-difluoroethylene. The composition can include from 55 to 80 mol % of 2,3,3,3-tetrafluoropropene and from 45 to 20 mol % of 1,2-difluoroethylene. The composition can include from 62 to 69 mol % of 2,3,3,3-tetrafluoropropene and from 38 to 31 mol % of 1,2-difluoroethylene at a temperature of between 30 C. and 56 C. and a pressure of between 1 and 15 bar.

A polishing agent comprises: a fluid medium; an abrasive grain containing a hydroxide of a tetravalent metal element; a first additive; a second additive; and a third additive, wherein: the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer; the second additive is a cationic polymer; and the third additive is an amino group-containing sulfonic acid compound.

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

The present invention relates to a metal polishing liquid for polishing at least a part of metal in a substrate having the metal, comprising, component A: a metal solubilizer containing amino acids, component B: compounds having the benzotriazole skeleton, and component C: an acrylic acid polymer having the weight average molecular weight of 10,000 or more, and having the mass ratio between the component B and the component C, (component B:component C), to be 1:1 to 1:5. Use of the metal polishing liquid can simultaneously yield high polishing rates and low etching rates at higher level, enabling to form an embedded pattern with higher reliability.

A polishing agent comprises: a fluid medium; an abrasive grain containing a hydroxide of a tetravalent metal element; a first additive; a second additive; and a third additive, wherein: the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer; the second additive is a cationic polymer; and the third additive is an amino group-containing sulfonic acid compound.

A 3D magnetorheological polishing device and a magnetorheological polishing fluid are provided. The 3D magnetorheological polishing device includes a container and a magnetic field generator. The container is disposed with an accommodation space to accommodate a polishing fluid and a workpiece that is to be polished. The container is disposed on the magnetic field generator and rotates synchronously with the magnetic field generator. The container and the magnetic field generator are capable of rotating in conjunction at a predetermined speed, such that the polishing efficiency is improved.

Silicon carbide (SiC) etchants with a generic formula of MXO.sub.2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO.sub.2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO.sub.2 etchant. Typical metal in the formula MXO.sub.2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO.sub.2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO.sub.2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing. The polishing waste water from the CMP process can be treated with ease in the waste water treatment facilities because of the absence of toxic heavy metal ions in the polishing formulations.