The invention relates to a suspension of cerium oxide particles, of which the particles (secondary particles) have an average size of at most 200 nm, these secondary particles consisting of primary particles whose average size measured by TEM is of at most 150 nm with a standard deviation of at most 30% of the value of said average size, and for which the ratio of the average size measured by TEM to the average size measured by BET is at least 1.5. This suspension is prepared from a solution of a cerium III salt, comprising a colloidal dispersion of cerium IV, which is brought into contact, in the presence of nitrate ions and under an inert atmosphere, with a base; the medium obtained is subjected to a thermal treatment under an inert atmosphere and then acidified and washed. The suspension can be used for polishing.

Embodiments of the invention provide a polishing composition including colloidal silica, pulverized wet-process silica particles, and a water-soluble polymer compound, wherein the water-soluble polymer compound is a polymer or copolymer having a constituent unit derived from an unsaturated aliphatic carboxylic acid. Various embodiments achieve a high polishing rate and obtain a good surface smoothness and end-face shape without the use of alumina particles.

Compositions containing 2,3,3,3-tetrafluoropropene and 1,2-difluoroethylene, that can be used in multiple fields of application. The composition can include from 45 to 90 mol % of 2,3,3,3-tetrafluoropropene and from 55 to 10 mol % of, 1,2-difluoroethylene. The composition can include from 55 to 80 mol % of 2,3,3,3-tetrafluoropropene and from 45 to 20 mol % of 1,2-difluoroethylene. The composition can include from 62 to 69 mol % of 2,3,3,3-tetrafluoropropene and from 38 to 31 mol % of 1,2-difluoroethylene at a temperature of between 30 C. and 55 C. and a pressure of between 1 and 15 bar.

The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

Compositions containing 2,3,3,3-tetrafluoropropene and 1,2-difluoroethylene, that can be used in multiple fields of application. The composition can include from 45 to 90 mol % of 2,3,3,3-tetrafluoropropene and from 55 to 10 mol % of, 1,2-difluoroethylene. The composition can include from 55 to 80 mol % of 2,3,3,3-tetrafluoropropene and from 45 to 20 mol % of 1,2-difluoroethylene. The composition can include from 62 to 69 mol % of 2,3,3,3-tetrafluoropropene and from 38 to 31 mol % of 1,2-difluoroethylene at a temperature of between 30 C. and 56 C. and a pressure of between 1 and 15 bar.

Silicon carbide (SiC) etchants with a generic formula of MXO.sub.2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO.sub.2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO.sub.2 etchant. Typical metal in the formula MXO.sub.2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO.sub.2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO.sub.2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing. The polishing waste water from the CMP process can be treated with ease in the waste water treatment facilities because of the absence of toxic heavy metal ions in the polishing formulations.

The present disclosure provides a novel azeotropic or azeotrope-like composition comprising hydrogen fluoride and 1,1,2-trifluoroethane (HFC-143), 1-chloro-2,2-difluoroethane (HCFC-142), or 1,2-dichloro-1-fluoroethane (HCFC-141); and a separation method using the composition. An azeotropic or azeotrope-like composition comprising hydrogen fluoride and HFC-143. An azeotropic or azeotrope-like composition comprising hydrogen fluoride and HCFC-142. An azeotropic or azeotrope-like composition comprising hydrogen fluoride and HCFC-141. A separation method of a composition comprising hydrogen fluoride and at least one member selected from the group consisting of HFC-143, HCFC-142, and HCFC-141.

Embodiments of the invention provide a polishing composition including colloidal silica, pulverized wet-process silica particles, and a water-soluble polymer compound, wherein the water-soluble polymer compound is a polymer or copolymer having a constituent unit derived from an unsaturated aliphatic carboxylic acid. Various embodiments achieve a high polishing rate and obtain a good surface smoothness and end-face shape without the use of alumina particles.