Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.

A process for synthesizing Cu.sub.2-xS/PbS core/shell nanocrystals. Pb-oleate is mixed with 1-octadecene and heated to 60° C. Cu.sub.2-xS core solution and bis(trimethylsilyl)sulfide stock solution are added and the mixture is stirred at 60° C. for 6 minutes to form the PbS shell around the Cu.sub.2-xS nanocrystal cores. The flask is cooled and acetonitrile and toluene is added and the mixture is centrifuged to precipitate and remove the Cu.sub.2-xS/PbS core/shell nanocrystals from the reaction mixture. The reaction also produces homogeneously nucleated PbS nanocrystals, which are removed from the Cu.sub.2-xS/PbS core/shell reaction mixture via size-selective precipitation. By tailoring the amounts of Pb-oleate and bis(trimethylsilyl)sulfide stock solution in the reaction vessel, while maintaining their molar ratio of 1.5:1 and the number of Cu.sub.2-xS cores in the reaction, Cu.sub.2-xS/PbS core/shell nanocrystals having a predetermined shell thickness of PbS, and thus a predetermined level of chemical stability, can be obtained.

A method of making a copper-doped glass comprising placing a target glass in a container, placing a target glass in a container, surrounding the target glass with a powder mixture comprised of fused silica (SiO.sub.2) powder and copper sulfide (Cu.sub.2S) powder, such that both the target glass and the surrounding powder are contained in the container, and heating the container and the target glass and the surrounding powder mixture to a temperature of between 800° C. and 1150° C.

A copper-doped glass formed by placing a target glass in a container, surrounding the target glass with a powder mixture comprised of SiO.sub.2 powder and Cu.sub.2S powder, wherein the SiO.sub.2 powder and the Cu.sub.2S powder are mixed according to the formula (SiO.sub.2).sub.(1-x)(Cu.sub.2S).sub.x, where 0.01<x<0.1, and heated to a temperature of between 800° C. and 1150° C. for a duration of between 1 and 10 hours.

Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

A method of synthesis of two-dimensional (2D) nanoparticles comprises combining a first nanoparticle precursor and a second nanoparticle precursor in one or more solvents to form a solution, followed by heating the solution to a first temperature for a first time period, then subsequently heating the solution to a second temperature for a second time period, wherein the second temperature is higher than the first temperature, to effect the conversion of the nanoparticle precursors into 2D nanoparticles. In one embodiment, the first nanoparticle precursor is a metal-amine complex and the second nanoparticle precursor is a slow-releasing chalcogen source.

The present invention relates to a photoelectric conversion element material provided with a base material and a light-receiving layer including a semiconductor film formed on the base material. The semiconductor film that forms this light-receiving layer includes Ag.sub.2xBi.sub.xS.sub.x+1 (x is an integer of 0 or 1) and has a crystallite diameter of 10 nm or more and 40 nm or less. The light-receiving layer can be produced by applying an ink containing the semiconductor nanoparticles dispersed in a dispersion medium to a base material and then firing the ink at 200 C. or higher and 350 C. or lower. The photoelectric conversion element material of the present invention has an absorption property with respect to light with wavelengths in the near infrared region and excellent photoresponsivity.

Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

Disclosed herein are composite fluorescent gold nanoclusters with high quantum yield, as well as methods for manufacturing the same. According to some embodiments, the composite fluorescent gold nanocluster includes a gold nanocluster and a capping layer that encapsulates at least a portion of the outer surface of the gold nanocluster. The capping layer includes a matrix made of a benzene-based compound, and multiple phosphine-based compounds distributed across the matrix.