Patent classifications
C09K11/661
METHODS OF FORMING NANOCRYSTALS AND RELATED CRYSTALS AND OPTOELECTRONIC DEVICES
Methods of fabricating nanocrystals are disclosed. Such methods may include providing copper sulfide core nanocrystals and providing a lead precursor. Moreover, the copper sulfide core nanocrystals may be reacted with the lead precursor to generate copper doped lead sulfide nanocrystals. Related nanocrystals and optoelectronic devices are also disclosed.
PHOTOACTIVE, INORGANIC LIGAND-CAPPED INORGANIC NANOCRYSTALS
Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.
LEAD SULFIDE NANOCRYSTALS, PREPARATION METHOD AND USES THEROF
The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.
LIGAND-EXCHANGEABLE JANUS NANOPARTICLES AND METHODS OF MAKING THE SAME
The present disclosure relates to a nanocrystal that includes a nanocrystal core, a first ligand coordinated to a first portion of a surface of the nanocrystal core, and a second ligand coordinated to a second portion of the surface, where the second ligand includes a first functionalized aromatic molecule.
LIGAND EXCHANGE OF NANOCRYSTAL FILMS
A method includes at least partially submerging a substrate in a colloidal mixture of nanocrystals and a first solvent. The nanocrystals have first ligands coupled thereto. The method also includes applying an electric field to the colloidal mixture to form a solvated nanocrystal film and removing the solvated nanocrystal film from the first solvent. The method further includes applying a second solvent to the solvated nanocrystal film for ligand exchange. The second solvent comprises second ligands. A nanocrystal film product formed by one-step ligand exchange includes at least one dimension greater than 100 nm and ordered nanocrystals characterized as having a domain size of greater than 100 nm.
Photon multiplying material
A photon multiplying material containing a luminescent material having organic semiconductor molecules capable of singlet fission attached thereto, wherein the organic semiconductor molecules are chemically attached to the luminescent material by a linking group and wherein the linking group and the band gap of the luminescent material are selected so that exciton triplet states formed by singlet fission in the attached organic semiconductor molecules can be energy transferred into the luminescent material.
Method for obtaining an n-type doped metal chalcogenide quantum dot solid-state film, and an optoelectronic device comprising the obtained film
Provided are methods for obtaining n-type doped metal chalcogenide quantum dot solid-state films. In some embodiments, the methods include forming an metal chalcogenide quantum dot solid-state film, carrying out a n-doping process on the metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid-state film so that they exhibit intraband absorption, wherein the process includes partially substituting chalcogen atoms by halogen atoms in the metal chalcogenide quantum dots and providing a substance on the plurality of metal chalcogenide quantum dots, to avoid oxygen p-doping of the metal chalcogenide quantum dots. Also provided are optoelectronic devices, which in some embodiments can include an n-type doped metal chalcogenide quantum dot solid-state film (A) obtained by a method as disclosed herein and first (E1) and second (E2) electrodes in physical contact with two respective distanced regions of the film (A).
PHOTODETECTOR ELEMENT, MANUFACTURING METHOD FOR PHOTODETECTOR ELEMENT, IMAGE SENSOR, DISPERSION LIQUID, AND SEMICONDUCTOR FILM
A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom.
PHOTODETECTOR ELEMENT, MANUFACTURING METHOD FOR PHOTODETECTOR ELEMENT, IMAGE SENSOR, DISPERSION LIQUID, AND SEMICONDUCTOR FILM
A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.
ELECTRONIC ELEMENT WITH NANOMATERIAL AND MANUFACTURING METHOD THEREOF
A nanomaterial includes quantum dots having a crystal structure, wherein the quantum dots include an exposed surface in a specific direction, and the exposed surface has a ligand bound thereto.