The presently disclosed subject matter relates generally to GaAs.sub.1xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.

Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals.

Disclosed herein are luminescent nanoparticles comprising In.sub.1-xZn.sub.xAs and In.sub.1-yZn.sub.yP, wherein x is from 0 to 0.5, y is from 0 to 0.6, and the molar ratio of In.sub.1-xZn.sub.xAs to In.sub.1-yZn.sub.yP is from 1:4 to 1:5000. In a preferred embodiment, the luminescent nanoparticles are InAsIn(Zn)PZnSeZn S quaternary giant-shell quantum dots that possess efficient photoluminescence in the near-infrared region with a large Stokes shift and minimal reabsorption. The core-shell nanoparticles may be particularly useful in the formation of a luminescent solar concentrator when used as part of a composite material formed from the nanoparticles and a suitable polymer. Also disclosed herein are methods to manufacture the nanoparticles, the composite materials and solar concentrators.

The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

The present disclosure provides a quantum dot. The quantum dot includes a group III-V quantum dot core, and at least one type of halide ions, acetylacetonate ions, or hydroxyl ions bound to a surface of the group III-V quantum dot core, where the halide ions, the acetylacetonate ions and the hydroxyl ions are bound with group III cations on the surface of the group III-V quantum dot core.

Techniques, systems, and devices are disclosed for implementing light-emitting hyperbolic metasurfaces. In one exemplary aspect, a light-emitting device includes a surface; a plurality of quantum heterostructures positioned on the surface, each of the plurality of quantum heterostructures including multiple quantum wells distributed along an axis perpendicular to the surface and separated by multiple quantum barriers, wherein each two adjacent quantum heterostructures of the plurality quantum heterostructures form a gap; and a monocrystalline material at least partially filling gaps between the plurality quantum heterostructures.

This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120 C. and 200 C.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Provided is a hybridized perovskite quantum dot material. The quantum dot material includes a kernel and surface ligands. The kernel is formed by R.sub.1NH.sub.3AB.sub.3 or (R.sub.2NH.sub.3).sub.2AB.sub.4, where R.sub.1 is methyl group, R.sub.2 is an organic molecular group, A is at least one selected from Ge, Sn, Pb, Sb, Bi, Cu and Mn, B is at least one selected from Cl, Br and I, A and B form a coordination octahedral structure, and R.sub.1NH.sub.3 or R.sub.2NH.sub.3 is filled in gaps of the coordination octahedral structure. The surface ligand is an organic acid or organic amine. The quantum dot material has a high fluorescence quantum yield.