Patent classifications
C09K11/75
Semiconductor nanocrystal particle and production methods thereof
A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:
A.sub.xA′.sub.(3+α−x)D.sub.(2+β)E.sub.(9+γ). Chemical Formula 1
In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1.
CsI(Tl) SCINTILLATOR CRYSTAL INCLUDING CO-DOPANTS ANTIOMY AND BISMUTH TO REDUCE AFTERGLOW, AND A RADIATION DETECTION APPARATUS INCLUDING THE SCINTILLATION CRYSTAL
A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsI:Tl, Me, where Me represents co-doped Sb and Bi. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium, a second dopant including an antimony, and a third dopant including a bismuth.
Nanophosphor-attached inorganic particles and wavelength conversion member
Provided are nanophosphor-attached inorganic particles that can suppress the degradation of the nanophosphor when sealed in glass, and a wavelength conversion member using the nanophosphor-attached inorganic particles. The nanophosphor-attached inorganic particle 10 include: inorganic particles 1 having an average particle diameter of 1 μm or more; and a nanophosphor 2 attached to surfaces of the inorganic particles 1.
Nanophosphor-attached inorganic particles and wavelength conversion member
Provided are nanophosphor-attached inorganic particles that can suppress the degradation of the nanophosphor when sealed in glass, and a wavelength conversion member using the nanophosphor-attached inorganic particles. The nanophosphor-attached inorganic particle 10 include: inorganic particles 1 having an average particle diameter of 1 μm or more; and a nanophosphor 2 attached to surfaces of the inorganic particles 1.
GaAs.SUB.1-x.Sb.SUB.x .nanowires on a graphitic substrate
The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
GaAs.SUB.1-x.Sb.SUB.x .nanowires on a graphitic substrate
The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
POLARIZED LUMINESCENT FILM
To provide a polarized luminescent film obtained by applying, to a substrate material, a polymerizable composition including a rod-like luminescent nanocrystal and a polymerizable liquid crystal compound, and radiating an active energy ray, and to provide a film having good polarization characteristics. The present invention provides a polarized luminescent film and a polarized luminescent multilayered body formed from a polymerizable composition containing a rod-like luminescent nanocrystal and a polymerizable liquid crystal compound. The present invention also provides a backlight and a display device including a polarized luminescent multilayered body according to the present invention.
GaAs1-xSbx NANOWIRES ON A GRAPHITIC SUBSTRATE
The presently disclosed subject matter relates generally to GaAs.sub.1xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
GaAs1-xSbx NANOWIRES ON A GRAPHITIC SUBSTRATE
The presently disclosed subject matter relates generally to GaAs.sub.1xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
SEMICONDUCTOR NANOCRYSTAL PARTICLE AND PRODUCTION METHODS THEREOF
A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:
A.sub.xA.sub.(3+x)D.sub.(2+)E.sub.(9+). Chemical Formula 1
In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x3, 1<<1, 3+x>0, 1<<1, and 1<<1.