There is provided a semiconductor film containing an aggregate of semiconductor quantum dots that contain an In element and a Group 15 element and a ligand that is coordinated to the semiconductor quantum dot, in which the Group 15 element includes an Sb element, and the ligand includes an inorganic ligand containing a halogen element. There are also provided a photodetection element, an image sensor, a dispersion liquid, and a manufacturing method for a semiconductor film.

An electrodeless lamp driven by a microwave generator is disclosed. The electrodeless lamp includes a first infill composed of mercury-free metal halide and provides a continuous full spectrum radiation including ultraviolet ray, visible light, and infrared ray. Thereby, the electrodeless lamp, which meets the standard of AM 1.5 G, has advantages of environmental friendliness, high efficacy lighting, long service life, and low light decay, and therefore, have become applicable in the field of solar simulators.

An electrodeless lamp driven by a microwave generator is disclosed. The electrodeless lamp includes a first infill composed of mercury-free metal halide and provides a continuous full spectrum radiation including ultraviolet ray, visible light, and infrared ray. Thereby, the electrodeless lamp, which meets the standard of AM 1.5 G, has advantages of environmental friendliness, high efficacy lighting, long service life, and low light decay, and therefore, have become applicable in the field of solar simulators.

Provided is a photochromic substance that has lower toxicity, exhibits good sensitivity in a visible light region, changes color deeply, has slow speed of color fading, has chemical and thermal stability, and has good durability. The photochromic substance has a composition represented by the formula:
Ba.sub.(a-b)Ca.sub.bMg.sub.cSi.sub.dO.sub.e:Fe.sub.fM.sub.gM.sub.h where 1.8a2.2, 0b0.1, 1.4c3.5, 1.8d2.2, e=(a+c+2d), 0.0001f, 0.0001g, 0h, M is at least one of Al and Eu, and M is at least one element selected from the group consisting of Na, K, Nd, Li, S, C, Ti, V, Mn, Cr, Cu, Ni, Co, Ge, Zn, Ga, Zr, Y, Nb, In, Ag, Mo, Sn, Sb, Bi, Ta, W, La, Ce, Pr, Nd, Sm, Gd, Er, Ho, Tb, Tm, Yb, Lu, P, Cd, and Pb.

In one aspect, compositions comprising Group III-V nanowires, and methods of making such nanowires, are described herein. In some embodiments, a composition described herein comprises one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs, and the first shell is formed from GaAs.sub.(1-x-y)Sb.sub.xN.sub.y. Additionally, x is 0.08-0.15, and y is 0.005-0.035. In some cases, x is 0.10-0.17, and/or y is 0.01-0.02. Further, the nanowires have an average emission maximum of 1.25-1.35 m. Moreover, in some instances, the nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell, in some embodiments, is formed from a Group III-V material such as GaAs. For example, in some instances, the nanowires have the structure GaAs/GaAs.sub.(0.82-0.9)Sb.sub.(0.09-0.15)N.sub.(0.005-0.033)/GaAs.

In one aspect, compositions comprising Group III-V nanowires, and methods of making such nanowires, are described herein. In some embodiments, a composition described herein comprises one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs, and the first shell is formed from GaAs.sub.(1-x-y)Sb.sub.xN.sub.y. Additionally, x is 0.08-0.15, and y is 0.005-0.035. In some cases, x is 0.10-0.17, and/or y is 0.01-0.02. Further, the nanowires have an average emission maximum of 1.25-1.35 m. Moreover, in some instances, the nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell, in some embodiments, is formed from a Group III-V material such as GaAs. For example, in some instances, the nanowires have the structure GaAs/GaAs.sub.(0.82-0.9)Sb.sub.(0.09-0.15)N.sub.(0.005-0.033)/GaAs.

Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, a dielectric multi-layer film provided on a light incident side of the optical filter, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 110.sup.4 g/m.sup.2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, a dielectric multi-layer film provided on a light incident side of the optical filter, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 110.sup.4 g/m.sup.2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:
A.sub.xA.sub.(3+x)D.sub.(2+)E.sub.(9+).Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x3, 1<<1, 3+x>0, 1<<1, and 1<<1.

A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsI:Tl, Me, where Me represents co-doped Sb and Bi. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium, a second dopant including an antimony, and a third dopant including a bismuth.