Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A phosphor, combined with LED having not exceeding 470 nm, of high emission intensity and with chemical and thermal stability is provided. The phosphor according to the present invention comprises an inorganic compound in which element A (A is one or two or more kinds of elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) is solid solved in an inorganic crystal including at least metal element M and non-metal element X and represented by M.sub.nX.sub.n+1 (3n5), an inorganic crystal having the same crystal structure, or an inorganic crystal including a solid solution thereof. Here, M comprises at least Al and Si, and if necessary element L (L is a metal element other than Al and Si) and X comprises N, O if necessary, and element Z if necessary (Z is a non-metal element other than N and O).

Provided are a phosphor emitting light having a wavelength of 600 nm or more in the red-to-nearinfrared range when irradiated with visible light or ultraviolet light; a method for producing same; a light emitting element using same; and a light emitting device using same. The phosphor includes an inorganic compound including A element, M element, D element, E element (A is at least one element selected from the group of Mg, Ca, Sr and Ba; M is at least one element selected from the group of Mn, Eu, Ce, Nd, Tb, Dy, Ho, Er, Tm and Yb; D is Si and/or Al; and E is O and/or N) and, if necessary, G element (G is Li), and represented by (A, M).sub.aD.sub.dE.sub.eG.sub.g, (atomic fraction parameters a, d, e and g satisfy 2.4?a?4.8, 17.4?d?22.2, 26.2?e?28.6 and 0?g?3).

A radiation-emitting device may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface, a first phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The second wavelength range may be or include infrared light. The device may further include an up-converting phosphor configured to convert infrared light of the second wavelength range into visible light.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A light emitting device comprising: an excitation source for generating light with a dominant peak wavelength from about 430 nm to about 480 nm; and a manganese-activated narrowband red phosphor of general composition K.sub.2TiF.sub.6:Mn.sup.4+, wherein light generated by the light emitting device has a change of chromaticity CIE x of less than 0.006 after operating for at least 500 hours in an environment of temperature 60 C. and relative humidity 90% W (WHTOL 60 C./90% RH).