Methods of nanomanufacturing based on continuous additive nanomanufacturing at fluid interfaces (CANFI). This approach is a fabrication technique that involves, for example, photocuring or “printing” self-assembled layers. CANFI presents a fabrication capability with significant transformative potential improve (i) the spatial resolution, (ii) the speed, and (iii) the range of material compositions that can be printed. Various articles of manufacture can be made using the methods.

A ceramic lithium indium diselenide or like radiation detector device formed as a pressed material that exhibits scintillation properties substantially identical to a corresponding single crystal growth radiation detector device, exhibiting the intrinsic property of the chemical compound, with an acceptable decrease in light output, but at a markedly lower cost due to the time savings associated with pressing versus single crystal growth.

The present disclosure discloses a quantum dot light emitting device and application thereof. The quantum dot light emitting device includes: an anode and a cathode disposed oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot light emitting layer, wherein a material of the hole transport layer is a copper-based quantum dot with a short-chain ligand on a surface.

2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.

Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.

The present disclosure discloses a quantum dot light emitting device and application thereof. The quantum dot light emitting device includes: an anode and a cathode disposed oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot light emitting layer, wherein a material of the hole transport layer is a copper-based quantum dot with a short-chain ligand on a surface.

A dispersion that includes water and a light-emitting body dispersed in the water. The light-emitting body contains a nanoparticle of a AgInSe compound semiconductor, and a film to which hydrophilicity is imparted by ultrasonic irradiation on a surface of the nanoparticle. The film has a double structure having a first organic molecular film containing an alkylthiol and a second organic molecular film composed mainly of a fatty acid. The light-emitting body has an emission quantum yield of 10% or more, an emission intensity peak wavelength in the range of 650 to 1000 nm, and a half-width ΔH of 100 nm or less at the emission intensity peak wavelength.

A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:
ABX.sub.3+α  Chemical Formula 1
wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR.sub.4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.

A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.