C11D3/042

Stable Nitric Acid Blends And Uses Thereof
20210380906 · 2021-12-09 ·

A modified aqueous acid composition comprising: nitric acid; sulfuric acid; a compound comprising an amine moiety and a sulfonic acid moiety; and a peroxide. Also disclosed are methods of using such composition.

Mechanism of urea/solid acid interaction under storage conditions and storage stable solid compositions comprising urea and acid

Solid rinsing, cleaning and/or sanitizing compositions for various applications are provided. In particular, solid compositions include a complex of urea and an acid having desireable storage stability previously unavailable in solid urea/acid compositions. Stable solid compositions are disclosed and methods of making the same to overcome conventional limitations associated with with forming kinetically and thermodynamically stable solids that utilize urea/acid compositions.

ACIDIC CLEANING COMPOSITIONS FOR ENHANCED SOIL REMOVAL
20210371775 · 2021-12-02 ·

Concentrated nitric acid cleaners employing the use of ethoxylated fatty alcohols, including a blend of polyethoxylated fatty alcohols, provide enhanced cleaning on metal and other surfaces, particularly stainless steel. Methods of use, including enhanced fatty soil removal and organic soil removal (such as soap scum) are also disclosed.

Formulations and method for low temperature cleaning of dairy equipment

A formulation having at least one of a product stabilization solvent, a sequestrant or chelating agent, and an alkalinity agent capable of use in a cleaning operation at a reduced temperature. Optionally, the formulation may additionally comprise any one or more of a degreaser emulsifier solvent, a surfactant, a hydrotrope, a stabilizer, a biocide, and a buffer. An additive formulation of the invention, as defined herein, comprises these stated types of compounds and is combined with an alkalinity agent at the time of the formulations use in a reduced temperature dairy equipment cleaning operation. A full formulation of the invention, as defined herein, additionally comprises an alkalinity agent in addition to the other named compounds. In many cases, the full formulations are used in a reduced temperature dairy equipment cleaning operation without being combined with an additional alkalinity agent. The reduced temperature of the dairy equipment cleaning operation using the formulation of the invention may be less than about 50° C. or, alternatively, less than about 40° C.

RUBBER CLEANING AND DEOXIDIZING COMPOSITION
20220195339 · 2022-06-23 ·

A rubber cleaning composition includes water, a cleaning and oxidation removal agent, a conditioning agent, and a drying agent. The cleaning agent includes citric acid. The conditioning agent includes glycerin. The cleaning and oxidation removal agent is present in a water:cleaning and oxidation removal agent volume ratio of about 100:1 to about 300:1. The conditioning agent is present in a water:conditioning agent volume ratio of about 7:1 to about 8:1. The drying agent is present in a water:drying agent volume ratio of about 1:1 to about 2:1. The composition cleans, protects, and improves performance of rubber, such as climbing shoe rubber.

Sustainable laundry sour compositions with iron control

Linen treatment compositions and linen processes are disclosed which help to prevent iron deposition from wash water, and/or redeposition after iron containing stain (such as blood) removal by alkaline detergents. The linen treatment composition is a combination of a hydroxycarboxylic acid and an acid source, which may be organic or inorganic. The invention provides for effective iron control in a phosphorus-free formula that is also free of toxic or hazardous chemicals and includes sustainable, environmentally friendly ingredients, while still providing effective iron control.

Acidic hard surface cleaner with glycine betaine ester

Cleaning compositions that include (a) a glycine betaine ester, (b) an acidifying agent, (c) polysaccharide thickener, and (d) water, are provided. Commonly, the glycine betaine ester may include one or more compounds of formula (I): Me.sub.3N.sup.+—CH.sub.2—C(O)—O—R X.sup.− wherein R is an aliphatic group having 8 to 22 carbon atoms and X″ represents an inorganic or organic anion. Commonly, the composition has a pH of no more than about 4, a viscosity of no more than about 1,500 cP at a shear rate of 10 at 25° C., and/or a viscosity of at least about 250 cP at a shear rate of 50 at 25° C. (where the viscosities are determined with a Brookfield Cone/Plate viscometer). The cleaning composition may exhibit a unique sheer thinning profile, such that the composition thins less after being sprayed onto a surface and thereby providing a longer contact time than conventional cleaning products.

RHEOLOGY MODIFIED LOW FOAMING LIQUID ANTIMICROBIAL COMPOSITIONS AND METHODS OF USE THEREOF

The present disclosure relates to rheology modified, low foaming aqueous antimicrobial compositions. The compositions are phase stable under acidic conditions, and do not need to be rinsed from the surface to which they are applied. The present disclosure further relates to methods of use thereof.

METHODS FOR STRIPPING AND CLEANING SEMICONDUCTOR STRUCTURES
20230260779 · 2023-08-17 ·

Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.

CLEANING LIQUID COMPOSITION FOR SEMICONDUCTOR WAFER AND CLEANING METHOD USING SAME
20220135903 · 2022-05-05 ·

The present disclosure relates to a semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and to a method of cleaning a semiconductor wafer using the cleaning composition. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.