Patent classifications
C11D3/245
Post Chemical Mechanical Planarization (CMP) Cleaning
Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.
CLEANING SOLVENT COMPOSITIONS EXHIBITING AZEOTROPE-LIKE BEHAVIOR AND THEIR USE
An azeotropic cleaning solvent composition has from about 96 to about 98 weight percent 1,1,1,3,3,3-hexafluoro-2-methoxypropane (“HFMOP”) and from about 2 to about 4 weight percent acetone, for example, about 97 weight percent HFMOP and about 3 weight percent acetone. Another composition of the invention has a weight ratio of HFMOP to acetone of about 24 to about 99, for example, about 24 to 49. Conventional additives such as surfactants, lubricants and co-solvents may be present in an amount not to exceed about 10 weight percent of the composition. A method of the invention comprises contacting an article of manufacture with the solvent composition in order to clean the article of manufacture and then removing the solvent composition from the article of manufacture.
CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD
A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.
DETERGENT COMPOSITION, CLEANING METHOD, SOLVENT COMPOSITION, USE THEREOF AS SOLVENT FOR OIL, AND OIL COMPOSITION CONTAINING SAME
An object of the present invention is to provide a solvent and a detergent that have excellent basic properties as solvents or detergents, such as solubility, and that have a boiling point, flammability, toxicity, GWP, and ODP that are all within preferable ranges.
To achieve the above object, the present invention provides a solvent composition or detergent composition comprising a hydrochlorofluoropropene represented by the formula: CX.sub.3CX═CX.sub.2, wherein each X is the same or different and is F or Cl, at least one X is F, and at least three X are Cl; the hydrochlorofluoropropene having an atmospheric pressure boiling point of 50° C. or higher.
DETERGENT COMPOSITION FOR LIQUID CARBON DIOXIDE BASE CLEANING
A liquid carbon dioxide base cleaning detergent composition includes: an organic solvent represented by chemical formula 1, and a contaminant remover, where the chemical formula 1 is R.sub.1—(CH.sub.2).sub.m(CF.sub.2).sub.n—R.sub.2, m refers to integers from 0 to 4, n refers to integers from 1 to 5, R.sub.1 and R.sub.2 refer to hydrogen H, fluorine F, CH.sub.3, CH.sub.30 or CF.sub.3.
Composition for removing polymer
Disclosed is a composition for removing polymers. The composition contains a fluorinated alkyl compound, a polar aprotic solvent, and an acyclic secondary or tertiary amine compound.
Method for cleaning membrane
A method for cleaning membrane is provided. The method includes, providing a membrane, introducing a thermo-sensitive ionic liquid to contact the membrane and perform a cleaning procedure to collect a cleaning solution, and layering the cleaning solution to form an aqueous layer and an ionic liquid layer at a specific temperature.
CLEANING AGENT COMPOSITION AND CLEANING METHOD
The invention provides a cleaning agent composition for use in removal of, for example, a polysiloxane adhesive. The composition contains a quaternary ammonium salt, an etching rate enhancer formed of an amphoteric surfactant, and an organic solvent.
Cleaning agent composition comprising an alkylamide solvent and a fluorine-containing quaternary ammonium salt
A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R.sup.0 represents an ethyl group, a propyl group, or an isopropyl group; and each of R.sup.A and R.sup.B represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %. ##STR00001##
CLEANING AGENT COMPOSITION AND CLEANING METHOD
A cleaning agent composition for use in removal of a polysiloxane adhesive remaining on a substrate, the composition containing a tetrahydrocarbylammonium fluoride and an organic solvent, wherein the organic solvent contains an alkylene glycol dialkyl ether and a lactam compound represented by formula (1).
##STR00001##
(in formula (1), R.sup.101 represents a C1 to C6 alkyl group, and R.sup.102 represents a C1 to C6 alkylene group.)