The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

##STR00001##

The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

##STR00001##

According to the invention, the compositions and methods provide for the complete removal of labels, synthetic glues and/or adhesives from a plurality of surfaces through the use of an aqueous or non-aqueous basic organic solvent and/or an amidine, optionally in combination with surfactants, chelants, acidulants and/or additional bottle wash additives. Beneficially, the compositions and methods are suitable for use at lower temperatures and pH conditions, along with under caustic-free and/or reduced caustic conditions to effectively remove such labels, synthetic glues and/or adhesives from a surface within less than about 30 minutes.

According to the invention, the compositions and methods provide for the complete removal of labels, synthetic glues and/or adhesives from a plurality of surfaces through the use of an aqueous or non-aqueous basic organic solvent and/or an amidine, optionally in combination with surfactants, chelants, acidulants and/or additional bottle wash additives. Beneficially, the compositions and methods are suitable for use at lower temperatures and pH conditions, along with under caustic-free and/or reduced caustic conditions to effectively remove such labels, synthetic glues and/or adhesives from a surface within less than about 30 minutes.

A gas turbine engine system includes a compressor, gas turbine, and combustor including a plurality of late lean fuel injectors supplied with secondary fuel to its interior. The gas turbine engine system includes a wash system in communication with the late lean fuel injectors. The wash system includes a water source; water pump; anti-corrosion agent fluid source with an anti-corrosion agent including a amine corrosion inhibitor; anti-corrosion agent supply piping in fluid communication with the anti-corrosion agent fluid source; mixing chamber receiving water and anti-corrosion agent to produce an anti-corrosion mixture in fluid communication with the mixing chamber and the plurality of late lean fuel injectors. Fluid from the mixing chamber including the water, the anti-corrosion agent fluid source, or a mixture thereof is injected, while the gas turbine engine is off-line, into the combustor and at least one of the plurality of late lean fuel injectors.

A gas turbine engine system includes a compressor, gas turbine, and combustor including a plurality of late lean fuel injectors supplied with secondary fuel to its interior. The gas turbine engine system includes a wash system in communication with the late lean fuel injectors. The wash system includes a water source; water pump; anti-corrosion agent fluid source with an anti-corrosion agent including a amine corrosion inhibitor; anti-corrosion agent supply piping in fluid communication with the anti-corrosion agent fluid source; mixing chamber receiving water and anti-corrosion agent to produce an anti-corrosion mixture in fluid communication with the mixing chamber and the plurality of late lean fuel injectors. Fluid from the mixing chamber including the water, the anti-corrosion agent fluid source, or a mixture thereof is injected, while the gas turbine engine is off-line, into the combustor and at least one of the plurality of late lean fuel injectors.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

Described herein is an automatic dishwashing (ADW) composition including as component (A) at least one imidazole-based compound selected from the group consisting of unsubstituted or at least monosubstituted imidazole and benzimidazole. The automatic dishwashing composition may include further components, such as polyakylene imines (component (B)), at least one silicate (component (C)) and/or at least one chelating agent (component (D)). Also described herein is a process for cleaning dishware using said ADW composition as well as a method of using said ADW composition, for example, to reduce any corrosion on the items to be dishwashed (dishware). Also described herein is a method of using at least one imidazole-based compound according to component (A) as a corrosion inhibitor in automatic dishwashing processes.

Described herein is an automatic dishwashing (ADW) composition including as component (A) at least one imidazole-based compound selected from the group consisting of unsubstituted or at least monosubstituted imidazole and benzimidazole. The automatic dishwashing composition may include further components, such as polyakylene imines (component (B)), at least one silicate (component (C)) and/or at least one chelating agent (component (D)). Also described herein is a process for cleaning dishware using said ADW composition as well as a method of using said ADW composition, for example, to reduce any corrosion on the items to be dishwashed (dishware). Also described herein is a method of using at least one imidazole-based compound according to component (A) as a corrosion inhibitor in automatic dishwashing processes.