The present disclosure relates to cleansing compositions that are free of sulfate-based surfactants and free of sodium chloride. The cleansing compositions include: (a) one or more non-sulfate anionic surfactants; one or more amphoteric surfactants; one or more nonionic surfactants; (d) one or more hydrophobically modified poly(meth)acrylates; one or more silicones; and water. The cleansing compositions are particularly useful for cleansing hair and providing conditioning benefits to the hair.

The present disclosure relates to cleansing compositions that are free of sulfate-based surfactants and free of sodium chloride. The cleansing compositions include: (a) one or more non-sulfate anionic surfactants; one or more amphoteric surfactants; one or more nonionic surfactants; (d) one or more hydrophobically modified poly(meth)acrylates; one or more silicones; and water. The cleansing compositions are particularly useful for cleansing hair and providing conditioning benefits to the hair.

A structured liquid detergent composition includes water, an anionic detergent surfactant, and a nonionic detergent surfactant. A ratio of the anionic detergent surfactant to the nonionic detergent surfactant is from about 0.5 to about 20. The structured liquid detergent composition further includes a zwitterionic or amphoteric surfactant and a bacterial-derived cellulose network. The structured liquid detergent composition exhibits improved rheological properties.

A structured liquid detergent composition includes water, an anionic detergent surfactant, and a nonionic detergent surfactant. A ratio of the anionic detergent surfactant to the nonionic detergent surfactant is from about 0.5 to about 20. The structured liquid detergent composition further includes a zwitterionic or amphoteric surfactant and a bacterial-derived cellulose network. The structured liquid detergent composition exhibits improved rheological properties.

The present invention relates to an aqueous composition for removing soils from a surface to be cleaned, formed from water, a detergent mixture and a rinse aid, wherein the detergent mixture comprises a peroxidation catalyst and wherein the rinse aid comprises an oxygen source. Such a composition may provide a more effective cleaning behaviour. The present invention further relates to a method for removing soil from a surface to be cleaned comprising applying to the surface to be cleaned a composition according to the invention.

The present invention relates to an aqueous composition for removing soils from a surface to be cleaned, formed from water, a detergent mixture and a rinse aid, wherein the detergent mixture comprises a peroxidation catalyst and wherein the rinse aid comprises an oxygen source. Such a composition may provide a more effective cleaning behaviour. The present invention further relates to a method for removing soil from a surface to be cleaned comprising applying to the surface to be cleaned a composition according to the invention.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

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The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

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