C11D7/06

HYDROGEN SUPPLY MATERIAL AND PRODUCTION METHOD THEREFOR, AND HYDROGEN SUPPLY METHOD

A layered solid formulation as one hydrogen supply material according to the present invention includes silicon fine particles having a capability of generating hydrogen and aggregates of the silicon fine particles, and a physiologically acceptable medium that gets contact with the silicon fine particles or the aggregates thereof. The hydrogen supply material is a hydrogen supply material for bringing the hydrogen into contact with the skin and/or the mucous membrane through the medium.

TREATMENT LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED
20230159864 · 2023-05-25 · ·

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

TREATMENT LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED
20230159864 · 2023-05-25 · ·

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

Cleaning Composition for Post Chemical Mechanical Planarization And Method Of Using The Same

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

Cleaning Composition for Post Chemical Mechanical Planarization And Method Of Using The Same

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

PHOSPHORUS FREE LOW TEMPERATURE WARE WASH DETERGENT FOR REDUCING SCALE BUILD-UP

Phosphorus-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the phosphorus-free detergent compositions for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the phosphorus-free detergent compositions are also provided.

PHOSPHORUS FREE LOW TEMPERATURE WARE WASH DETERGENT FOR REDUCING SCALE BUILD-UP

Phosphorus-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the phosphorus-free detergent compositions for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the phosphorus-free detergent compositions are also provided.

Alkaline detergent composition containing a carboxylic acid/polyalkylene oxide copolymer for hard water scale control

An alkaline detergent is described which includes the use of a copolymer in combination with an alkali metal hydroxide. The detergent maintains cleaning functions and also prevents hard water scaling, for example at application temperatures of between 145-180 degrees Fahrenheit and with a pH of 9.5 to about 13.

Alkaline detergent composition containing a carboxylic acid/polyalkylene oxide copolymer for hard water scale control

An alkaline detergent is described which includes the use of a copolymer in combination with an alkali metal hydroxide. The detergent maintains cleaning functions and also prevents hard water scaling, for example at application temperatures of between 145-180 degrees Fahrenheit and with a pH of 9.5 to about 13.

Use of an oxidising alkaline gel to remove a biofilm on a surface of a solid substrate

The use of a gel consisting of a colloidal solution comprising, preferably consisting of: 5% to 30% by weight, preferably 5% to 25% by weight, more preferably 8% to 20% by weight relative to the weight of the gel, of at least one inorganic viscosifying agent; a mineral base selected from among hydroxides of alkaline metals, hydroxides of alkaline-earth metals and the mixtures thereof, said mineral base being present in a proportion of 0.05 to 10 mol/L of gel, preferably in a proportion of 0.1 to 5 mol/L of gel; an oxidizing agent stable in a basic medium selected from among permanganates, persulfates, ozone, hypochlorites and the mixtures thereof, said oxidizing agent stable in a basic medium being present in a proportion of 0.05 to 5 mol/L of gel, preferably 0.1 to 2 mol/L of gel; 0.1% to 2% by weight relative to the weight of the gel, of at least one surfactant; and a solvent; the gel not containing any super-absorbent polymer, to remove a biofilm present on a surface of a solid substrate.