A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C.sub.3-C.sub.6 alcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

This invention relates to isolating and removing mildew, harmful bacterial and pets urine out of handmade wool and silk rugs.

The invention consist of three procedures that describes each step of work, chemicals mixture and timing used to achieve the this process.

It saves handmade rugs from being discarded, it describes a new safe and healthy approach in cleaning handmade rugs.

This invention relates to isolating and removing mildew, harmful bacterial and pets urine out of handmade wool and silk rugs.

The invention consist of three procedures that describes each step of work, chemicals mixture and timing used to achieve the this process.

It saves handmade rugs from being discarded, it describes a new safe and healthy approach in cleaning handmade rugs.

The invention relates to a concentrated detergent composition comprising an alkali metal hydroxide, methylglycinediacetic acid, glutamic acid N,N-diacetic acid, and alkali metal tripolyphosphate. The composition is particularly suited to remove tea and coffee soil in warewashing applications.

The invention relates to a concentrated detergent composition comprising an alkali metal hydroxide, methylglycinediacetic acid, glutamic acid N,N-diacetic acid, and alkali metal tripolyphosphate. The composition is particularly suited to remove tea and coffee soil in warewashing applications.

According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

Embodiments of the present disclosure generally relate to methods for detecting end-points of cleaning processes for aerospace components containing corrosion. The method includes exposing the aerospace component to a first solvent, exposing the aerospace component to a first water rinse, and analyzing a first aliquot of the first water rinse by absorbance spectroscopy to determine an intermediate solute concentration in the first aliquot, where the intermediate solute concentration is greater than a reference solute concentration. The method further includes exposing the aerospace component to an aqueous cleaning solution to remove corrosion from the aluminum oxide layer, exposing the aerospace component to a second solvent, and exposing the aerospace component to a second water rinse, and analyzing a second aliquot of the second water rinse by absorbance spectroscopy to determine a post-clean solute concentration in the second aliquot, where the post-clean solute concentration is less than the intermediate solute concentration.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.