This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.

According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.

According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.

Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

The present invention comprises chlorinated and non-chlorinated alkaline cleaning compositions for removal of proteinaceous and fatty soils at low temperature, i.e. less than 120° F., with little or no deleterious affect on cleaning performance. According to the invention, applicants have found that adding additional alkalinity makes protein removal more difficult and reducing the amount of alkalinity actually improves performance. According to the invention optimized combinations of chlorine and alkalinity components for low temperature cleaning as well as a surfactant system optimized for low temperature fatty soil removal are disclosed.

The present invention comprises chlorinated and non-chlorinated alkaline cleaning compositions for removal of proteinaceous and fatty soils at low temperature, i.e. less than 120° F., with little or no deleterious affect on cleaning performance. According to the invention, applicants have found that adding additional alkalinity makes protein removal more difficult and reducing the amount of alkalinity actually improves performance. According to the invention optimized combinations of chlorine and alkalinity components for low temperature cleaning as well as a surfactant system optimized for low temperature fatty soil removal are disclosed.

Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.

Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.

A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.