An aqueous composition includes (A) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C.sub.4-13 alkylphosphonic acid, a C.sub.4-13 alkylphosphonate ester, a C.sub.4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 50 mass % of an acid other than the C.sub.4-13 alkylphosphonic acid, the C.sub.4-13 alkylphosphonate ester and the C.sub.4-13 alkyl phosphate or a salt thereof, with respect to the total amount of the aqueous composition.

The processing system (1) is provided with an etching tank (2) and a circulation pipe (7) that exits from the bottom portion of the etching tank (2) and returns to the etching tank (2). The circulation pipe (7) is provided with a liquid feed pump (8), a heat exchanger (9), a sulfuric acid concentration meter (10), and an oxidant concentration meter (11). The sulfuric acid concentration meter (10) and the oxidant concentration meter (11) can transmit measurement results to a calculation/control device (12). The etching tank (2) can be replenished with hydrogen peroxide water, sulfuric acid, and pure water through a hydrogen peroxide water supply line (13), a sulfuric acid supply line (14), and a pure water supply line (15). The calculation/control device (12) can adjust the supply amounts of hydrogen peroxide water, sulfuric acid, and pure water to respective desired amounts. Such a processing system enables etching of a resin molded article while maintaining both the sulfuric acid concentration and the oxidant concentration of a sulfuric acid solution that is free from hexavalent chromic acid or permanganic acid and contains an oxidizing substance obtained by mixing sulfuric acid and hydrogen peroxide water.

A method of washing a food product with a short-term, intense treatment solution. One example method generally includes: applying, using a short-term wash device, a short-term wash treatment solution to the food product; and applying, using a wash device coupled to the short-term wash device, a wash treatment to the food product such that the wash treatment rinses the short-term wash treatment solution from the food product, wherein: the short-term wash treatment solution is applied to the food product for a shorter duration than the wash treatment is applied to the food product; the short-term wash treatment solution is chemically different from the wash treatment; and the short-term wash treatment solution comprises an acidulant and a polyol.

A method of washing a food product with a short-term, intense treatment solution. One example method generally includes: applying, using a short-term wash device, a short-term wash treatment solution to the food product; and applying, using a wash device coupled to the short-term wash device, a wash treatment to the food product such that the wash treatment rinses the short-term wash treatment solution from the food product, wherein: the short-term wash treatment solution is applied to the food product for a shorter duration than the wash treatment is applied to the food product; the short-term wash treatment solution is chemically different from the wash treatment; and the short-term wash treatment solution comprises an acidulant and a polyol.

A cleaning composition comprising: a. At least one alkanolamine b. At least one mineral acid c. At least one salt of a hydroxycarboxylic acid d. At least one protease enzyme; wherein said composition contains no surfactant.

A cleaning composition comprising: a. At least one alkanolamine b. At least one mineral acid c. At least one salt of a hydroxycarboxylic acid d. At least one protease enzyme; wherein said composition contains no surfactant.

A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

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A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

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There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.