Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

The present invention provides a semiconductor cleaning liquid which contains isopropyl alcohol, while having a mass ratio of t-butyl alcohol of 1 ppm or less relative to the isopropyl alcohol. The present invention also provides a method for producing a semiconductor cleaning liquid, the method comprising a first distillation step in which a crude aqueous isopropyl alcohol solution that contains t-butyl alcohol as an impurity is supplied to a starting material supply plate of a first distillation column, and a first liquid distillate which contains a low boiling point impurity that has a lower boiling point than isopropyl alcohol is extracted from the column top of the first distillation column, while extracting a first bottom liquid from the column bottom of the first distillation column. In the first distillation step, a fluid containing water is supplied, from the outside of the first distillation column, to a predetermined plate that is above the starting material supply plate by two or more theoretical plates so that the water content in the liquid phase is 15% by mass or more at three or more theoretical plates among the plates of the first distillation column from the starting material supply plate to the column top.

A cleaning composition includes an alcohol solvent and an organometallic compound. A content of the organometallic compound is greater than 0 and 5 ppb or less based on a total weight of the composition. The organometallic compound suppresses the generation of impurities such as aldehyde and ketone, thereby reducing an occurrence of defects in manufacturing processes of semiconductor and display and improving yields.

The present disclosure relates to a thinner composition for removing a resist and a processing method of a semiconductor substrate using the thinner composition. Particularly, the thinner composition includes (a) propylene glycol monoalkyl ether, (b) propylene glycol monoalkyl ether acetate, (c) cyclohexanone, and (d) cyclopentanone. In addition, the processing method of a semiconductor substrate includes applying a resist composition on a semiconductor substrate and removing the applied resist composition using the thinner composition of the present invention.

The present disclosure relates to compositions, typically fragrance compositions, that actively reduce malodorous aldehydes and ketones. The present disclosure also relates to uses and methods of using such compositions for preventing, reducing, or ameliorating malodor caused by such malodorous aldehydes and ketones.

A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.

A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by M.sub.A [mass %] and the content of the (B) component is indicated by M.sub.B [mass %], M.sub.A/M.sub.B is 1.010.sup.2 to 1.010.sup.4.
R.sub.2N(OH)(1)
R.sub.2NH(2) (In the formula (1) and the formula (2), R's each independently represent an alkyl group having 1 to 4 carbon atoms).

A kit for cleaning the yellow/brown line on the plastic material walls of a swimming pool at the waterline.

The kit comprises: a first container containing a liquid comprising (i) an acidic compound having a pKa at 25 C. less than or equal to 5 at a concentration greater than or equal to 15% by weight and/or (ii) a liquid organic compound belonging to the class of ketones or glycols or acetates; a second container containing an aqueous solution comprising sodium hypochlorite at a concentration greater than or equal to 3% w/V.