A hard surface cleaning composition, namely a bathroom cleaning composition, using fully neutralized ethanolamine citrate salts is disclosed. The cleaning composition is unexpectedly safe to use, environmentally-friendly and efficacious for removal of soap scum and water hardness stains at mildly acidic and/or alkaline pHs. Methods of using the same are disclosed.

A Low-VOC, water-based cleaner containing Baypure CX 100/34 or EDTA Versene 100, Glycol Ether DPNP, or glycol ether EB and DB, Acetone, Acetic Acid, and fragrance. The VOC content of this composition is selectable to be 3.0% or 0% (zero).

Linen treatment compositions and linen processes are disclosed which help to prevent iron deposition from wash water, and/or redeposition after iron containing stain (such as blood) removal by alkaline detergents. The linen treatment composition is a combination of a hydroxycarboxylic acid and an acid source, which may be organic or inorganic. The invention provides for effective iron control in a phosphorus-free formula that is also free of toxic or hazardous chemicals and includes sustainable, environmentally friendly ingredients, while still providing effective iron control.

The present invention relates to compositions for the photodynamic control of micro-organisms wherein the compositions comprise a photosensitiser which comprises a dyestuff and produces singlet oxygen when irradiated by means of light for the disinfection and sterilization of materials, commodities and surfaces contaminated with one or more species of micro-organisms including bacteria, fungi, algae, yeasts, bacterial spores and fungal spores.

A composition and method are used to treat articles suspected of contamination with bacterial spores. The composition and method are effective against bacterial spores selected from C. diff., C. botulinum, C. sporogenes, B. cereus, and B. subtilis. The article can be a textile or a hard surface. The method includes preparing a first use solution by mixing ether amine in water and a second use solution by mixing percarboxylic acid in water; applying the first use solution to the article; and applying the second use solution to the article. An alternative method includes preparing a mixture of ether amine, percarboxylic acid, and water, and applying the mixture to the article.

Methods of cleaning and sanitizing membrane modules within a membrane system are provided. A cleaning solution is circulated through the membrane system for about 2 to about 30 minutes. The cleaning solution includes organic acid and surfactant. A sanitizing solution is added to the cleaning solution to produce a boosted antimicrobial solution comprising an oxidizer. The boosted antimicrobial solution is then circulated through the membrane system for about 1 to about 20 minutes. The methods described are effective for reducing and removing bacterial spores and biofilms from membranes and improving membrane compatibility of effective cleaning and sanitizing solutions.

Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces and enhance protein removal from the treated surfaces. Beneficially the detergent compositions have a concentrate pH less than about 11.5. The detergent compositions are used with a sanitizer to employ the low alkaline detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the low alkaline detergent compositions are also provided.

The disclosed subject matter relates to a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate where the rinse includes acetic acid and/or a halogenated acetic acid of structure (A) wherein R.sub.1 and R.sub.2 are independently hydrogen or a halogen and R.sub.3 is a halogen and (ii) a compound having structure (B) wherein each of R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e, R.sub.f, R.sub.g and Rh may independently be hydrogen, a substituted or an unsubstituted alkyl group, a substituted or an unsubstituted halogenated alkyl group, a substituted or an unsubstituted alkyl carbonyl group, a halogen, and a hydroxy group.

An object of the present invention is to provide a cleaning liquid that effectively removes in a short time organic residues and abrasive grains derived from a slurry in a semiconductor substrate in which a Co contact plug and/or Co wiring are present.

The present invention relates to a cleaning liquid composition for cleaning a substrate having a Co contact plug and/or Co wiring, which contains one or more reducing agents and water. Furthermore, the present invention relates to a cleaning liquid composition for cleaning a substrate having Co and not having Cu, which contains one or more reducing agents and water and has a pH of 3 or more and less than 12.

A method is used for cleaning heat exchanger systems. The method is performed at a computer system having one or more processors and memory storing one or more programs configured for execution by the one or more processors. The method determines component percentages of a cleaning solution based, at least in part, on operational parameters of a heat exchanger system. The operational parameters include chemical composition of fluids passing through the heat exchanger system and operating temperatures of the fluids passing through the heat exchanger system. The component percentages of the cleaning solution include: (1) hydrogen peroxide, 2-90 wt. %; (2) a complexing agent, 3-30 wt. %; (3) water-soluble calixarene, 0.01-10 wt. %; and (4) water. The complexing agent includes a polybasic organic acid or a sodium salt thereof, or a derivative of phosphorous acid.