To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention is a substrate cleaning solution comprising a polymer (A), an alkaline component (B), and a solvent (C), provided that the alkaline component (B) does not comprise ammonia.

The present disclosure relates to high alkaline cleaners, cleaning systems and methods for removing polymerized zero trans fat soils. The high alkaline cleaner of the present invention generally includes one or more alkaline wetting and saponifying agent(s), a chelating/sequestering system and a surface modifying-threshold agent system. In various embodiments, the cleaners may include, at least one cleaning agent comprising a surfactant or surfactant system and/or a solvent or solvent system and/or a cleaning booster such as a peroxide or sulfite type additive. The cleaners may also include one or more components to modify the composition form and/or the application method in some embodiments. All components described above may also be optimized optionally, to provide emulsification of a composition (both as a usable product or a concentrate that can be diluted to form a usable product). The use of the high alkaline cleaner of the present invention has demonstrated enhanced cleaning characteristics especially at higher temperatures (100° F. to about 300° F.) but also shows enhanced cleaning at ambient temperatures.

A cleaner composition consisting essentially of (A) 92.0 wt % to less than 99.9 wt % of an organic solvent, (B) 0.1 wt % to less than 8.0 wt % of a C.sub.3-C.sub.6 alcohol, and (C) 0.001-3.0 wt % of a quaternary ammonium salt is effective for removing any silicone adhesive residues on a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C.sub.3-C.sub.6 alcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

A cleaning liquid which includes 3-alkoxy-3-methyl-1-butanol represented by the following general formula (1); at least one of diethylene glycol monomethyl ether and triethylene glycol monomethyl ether; and quaternary ammonium hydroxide:

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in which R.sup.1 represents an alkyl group having 1 to 5 carbon atoms.

A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like. The mass concentration of potassium permanganate in the abovementioned oxidizing agent (A) is between 0.001% and 0.1%, inclusive, and the mass concentration of the abovementioned fluorine compound (B) is between 0.01% and 1%, inclusive.

The invention discloses cleaning compositions which employ a synergistic combination of an ester solvent, preferably a fatty acid methyl ester in combination with one or more linear alkyl amines. The alkyl amines act as to remove and suspend organic oils which have been burnt or adhered to a surface with heat and may even be used alone as a soil removal agent. The cleaning compositions have particular use in cleaning of distillation towers associated with biofuel, and vegetable oil refining, but also find use in cleaning ovens, food cooking surfaces and even dry cleaning.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.