Provided are: a surface treatment liquid having a hydrophilization effect that is not easily deteriorated over time even if a surface-treated article is exposed to various agents; and a surface treatment method using the surface treatment liquid. The surface treatment liquid contains a resin (A) and a solvent (S). The resin (A) contains a constituent unit (a1) derived from a betaine monomer comprising a group having an ethylenically unsaturated double bond, a cationic group, and an anionic group, and not comprising an ester bond or an amide bond. The cationic group is preferably a quaternary nitrogen cation group, and the anionic group is preferably a sulfonic acid anion group, a phosphonic acid anion group, or a carboxylic acid anion group.

A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more: component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below,

##STR00001## component (B): a buffer represented by a formula: R—COO—NH.sub.4.sup.+.

A fragrance premix composition that includes a silicone polymer, an aminofunctional material characterized by a molecular weight of less than about 1000 Daltons and having at least one primary or secondary amine moiety, and a fragrance material that includes one or more perfume raw materials having an aldehyde or ketone moiety, where the silicone, the aminofunctional material, and the fragrance material are reasonably miscible. Consumer products that include such fragrance premix compositions. Related methods of making and using such premixes and products.

Provided is a composition having high affinity for the surface of an adhesive, and excellent long-term storage stability. This composition comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and an aprotic solvent, wherein the aprotic solvent includes (A) an N-substituted amide compound having 4 or more carbon atoms and not containing active hydrogen on a nitrogen atom, and (B) an ether compound.

A cleaning composition for semiconductor substrates. The cleaning composition comprises hydrogen peroxide, a hydrogen peroxide stabilizing agent, an alkaline compound, and water. The hydrogen peroxide stabilizing agent is oxalic acid, diethylenetriaminepentaacetic acid, hydroxyethyliminodiacetic acid, potassium oxalate, 5-phenyl-1H-tetrazole, triethylenetetraminehexaacetic acid, trans-1,2-cyclohexanediaminetetraacetic acid, 8-quinolinol, L(+)-isoleucine, DL-valine, L(-)-proline, hydroxyethylethylenediaminetriacetic acid, N,N-di(2-hydroxyethyl)glycine, glycine, L-tryptophan, 2,6-pyridinedicarboxylic acid, benzothiazole, or DL-alanine. The alkaline compound is a quaternary ammonium hydroxide or potassium hydroxide.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid containing (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.−12 to 10.sup.−4.

A cleaning composition which can remove a layer of interest using a conventional apparatus, such as a coater, a baking furnace and a cleaning chamber, installed in semiconductor manufacturing equipment while preventing the damage or deformation of layers other than the layer of interest, such as a substrate and an interlayer insulation film; a cleaning method using the cleaning composition; and a method for producing a semiconductor employing the cleaning method. A layer of interest formed on a substrate is cleaned with a cleaning composition containing a component capable of decomposing the layer of interest and a film-forming polymer. An example of the layer of interest is a hard mask film. An example of the component is at least one of a basic compound and an acidic compound.

The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

Improved stripper solutions for removing photoresists from substrates are provided that exhibit improved compatibility with copper, leadfree solder, and epoxy-based molding compounds. The stripper solutions comprise a primary solvent, a secondary glycol ether solvent, potassium hydroxide, and an amine. The solutions also exhibit reduced potassium carbonate crystal formation compared to conventional formulations containing potassium hydroxide, and extended bath life compared to formulations containing tetramethylammonium hydroxide.