This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.2 to 10, and the mass ratio of the component C content to the sum of the component A content and the component B content is 5 to 100.

There is provided a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance with respect to a semiconductor substrate including a metal film after CMP and has a small surface roughness of a metal film after cleaning. The cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, including a compound represented by Formula (1), a compound represented by Formula (2), a primary amino alcohol having a primary amino group or a secondary amino group, a tertiary amine; and a solvent.

##STR00001##

A method for selective etching Si in the presence of silicon nitride and an etching composition with high Si/Si3N4 etching selectivity are disclosed. Particularly, the method for selective etching Si in the presence of silicon nitride is to apply the etching composition with high Si/Si3N4 etching selectivity in the etching process, and the etching composition with high Si/Si3N4 etching selectivity comprises about 0.5 wt. % to about 10 wt. % of at least one quaternary ammonium compound, about 5 wt. % to about 55 wt. % of at least one primary amine, about 15 wt. % to about 80 wt. % of at least one polyol, and about 10 wt. % to about 35 wt. % water based on total weight of the etching composition.

A cleaning composition comprising: a. At least one alkanolamine b. At least one mineral acid c. At least one salt of a hydroxycarboxylic acid d. At least one protease enzyme; wherein said composition contains no surfactant.

A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

##STR00001##

The cleaning agent composition for hard surface contains at least one kind of carboxylic acid compound selected from the group consisting of an aliphatic monocarboxylic acid, a polycarboxylic acid, and any neutralized salt of these, a specific first alkyleneoxy group-containing compound, a specific second alkyleneoxy group-containing compound, and a specific oxypropylene group-containing compound.

Stable formulations and perfume compositions include amino alcohol(s) as well as >10 wt % fragrances.

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

A detergent composition and a polishing composition are provided. The detergent composition facilitates sufficient removal of polishing agents, metal microparticles, and anticorrosives in cleaning of a semiconductor substrate and long-term maintenance of flatness of a metal wiring surface after cleaning and achieves excellent quality stability for a long period of time; and the polishing composition facilitates suppression of scratching on a polished object such as a semiconductor substrate, and reduction of filter clogging. A detergent composition containing an alkanol hydroxylamine compound represented by General Formula (1) and having a pH of 10 to 13, and a chemical-mechanical polishing composition containing the detergent composition and a polishing agent. In Formula (1), R.sup.a1 and R.sup.a2 are the same or different and each represents a hydrogen atom or an alkyl group having from 1 to 10 carbons and having from 1 to 3 hydroxyl groups, with proviso that R.sup.a1 and R.sup.a2 are not simultaneously hydrogen atoms, and a total number of hydroxyl groups present in R.sup.a1 and R.sup.a2 is not 0.

##STR00001##