The present invention provides a composition for a semiconductor device, which is excellent in residue removability. In addition, the present invention provides a substrate washing method using the treatment liquid. The composition for a semiconductor device contains alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) alkanolamine; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.−12 to 10.sup.−4.

Improved stripper solutions for removing photoresists from substrates are provided that exhibit improved compatibility with copper, leadfree solder, and epoxy-based molding compounds. The stripper solutions comprise a primary solvent, a secondary glycol ether solvent, potassium hydroxide, and an amine. The solutions also exhibit reduced potassium carbonate crystal formation compared to conventional formulations containing potassium hydroxide, and extended bath life compared to formulations containing tetramethylammonium hydroxide.

Described are methods for removing abrasive particles from a polymeric surface, such as from a polymeric surface of a cleaning brush used in a post chemical-mechanical processing cleaning step, as well as related cleaning solutions.

The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa.Math.s or less at 20° C. and a pH of 9.0-14.

The present invention provides a treatment liquid that exhibits excellent washing properties and improves the smoothness of an object to be treated in a case where the treatment liquid is used for treating an object to be treated containing a cobalt-containing substance. The present invention also provides a method for treating an object to be treated. The treatment liquid according to an embodiment of the present invention contains water, hydroxylamine, and three kinds of first anions consisting of Cl.sup.−, NO.sub.2.sup.−, and NO.sub.3.sup.−, in which a total content of the first anions is 0.0001 to 30 parts by mass with respect to 100 parts by mass of the hydroxylamine.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria. The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SO.sub.x or NO.sub.y partial structure-containing compound having a partial structure represented by SO.sub.x or NO.sub.y (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.