This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.

An aqueous modified acid composition for industrial activities, said composition comprising: an alkanolamine and strong acid in a molar ratio of not less than 1:15, preferably not less than 1:10; it can also further comprise a metal iodide or iodate. Said composition demonstrates advantages over known conventional acids and modified acids.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one alkylsulfonic acid or a salt thereof, the alkylsulfonic acid containing an alkyl group substituted by OH or NH.sub.2; and 3) at least one aminoalcohol.

A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.

This invention relates to a photoresist stripper composition. The photoresist stripper composition according to the present invention comprises at least one choline compound; at least one polar aprotic solvent; and water; the weight percentage of the choline compound is from 2.5 to 50%, preferably from 5 to 50%, more preferably from 7 to 30%, and most preferably from 9 to 18% by weight based on the total weight of the composition. The photoresist stripper composition according to the present invention exhibits excellent photoresist cleaning performance and low etching to the substrate.

A concentrate aqueous composition for removing Type I and Type III rouge from various stainless-steel items. The liquid composition comprises oxalic acid, a phosphonic acid, and various amines. The use of an amine has been found to provide synergistic results in removal of the noted types of corrosion from various stainless-steel items that include medical instruments, machines, equipment, pipes, tools, mixing and storage vessels, and the like.

The present invention relates to a peeling solution composition for dry film resist, which is usable for manufacturing a PCB for forming a microcircuit, and particularly is applicable for a process of manufacturing a flexible multi-layer PCB.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one alkylsulfonic acid or a salt thereof, the alkylsulfonic acid containing an alkyl group substituted by OH or NH.sub.2; 3) at least one aminoalcohol; 4) at least one corrosion inhibitor; 5) at least one water soluble organic solvent; 6) water; and 7) optionally, at least one pH adjusting agent.

Provided herein is a composition for cleaning skin strips of skin skis, in particular for removing hydrophobic compounds, such as oils, resins, grease, and/or waxes, from the surface of the skin strips. The composition comprises (a) C.sub.1-6-alcohol; (b) at least 10% by weight of the total weight of the composition of dibasic ester(s) of formula R.sup.1OC(O)(CH.sub.2).sub.nC(O)OR.sup.1, wherein n is 2 to 4; and each R.sup.1 is independently C.sub.1-6-alkyl, (c) 0 to 5% by weight of the total weight of the composition of alkoxyalkanol(s) of formula R.sup.2O(CH.sub.2).sub.mOH wherein m is 1 to 4, preferably 2 or 3, and R.sup.2 is C.sub.1-6-alkyl, preferably C.sub.3-6-alkyl; and (d) 0 to 5% by weight of the total weight of the composition of tri(C.sub.1-6-alkanol) amine(s).