A detergent additive comprising an active, the active comprising one or both of tetraacetylethylenediamine or triacetylethylenediamine; and a copolymer having maleic anhydride-based repeat units and either or both of olefinic or styrenic-based repeat units; and wherein at least a portion of the maleic anhydride-based repeat units are neutralized.

A detergent additive comprising an active, the active comprising one or both of tetraacetylethylenediamine and triacetylethylenediamine; and polyvinyl butyral. A method of preparing a detergent additive comprising providing a solvent to a reaction mixture; providing polyvinyl butyral to the reaction mixture; providing an active to the reaction mixture, the active comprising one or both of tetraacetylethylenediamine and triacetylethylenediamine; mixing the reaction mixture; and spray-drying the reaction mixture.

A solvent consisting essentially of: (A) a first component consisting of N,N-diethylacetamide (DEAC); (B) a second component consisting of 3-methoxy-N, N-dimethyl propionamide (M3DMPA); and (C) an optional third component consisting of one or more glycol ethers or glycol ether acetates; or a solvent consisting essentially of: (1) a first component consisting of one or more acyclic amides of Formula (I): and (2) an optional second component consisting of one or more of DEAC, M3DMPA, N,N-dimethylpropionamide, one or more glycol ethers or glycol ether acetates, and one or more cyclic amides of Formulae (II-IV).

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A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

An object of the present invention is to provide a chemical liquid having excellent defect inhibition performance and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent that has a conductivity equal to or lower than 10.sup.5 S/m at 25 C., and a compound represented by General Formula (I), in which a content of the compound represented by General Formula (I) with respect to the total mass of the chemical liquid is 0.10 mass ppt to 100,000 mass ppt.

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The invention provides a cleaning formulation comprising a multiplicity of solid cleaning particles, wherein the solid cleaning particles comprise polymeric particles and at least one cleaning agent, wherein the at least one cleaning agent is immobilised on the surface of the polymeric particles. Typically the at least one cleaning agent is immobilised on the surface of the polymeric particles by means of chemical bonds, typically ionic bonds, hydrogen bonds, covalent bonds, polar bonds, or bonds formed by virtue of unequal charge distributions between polymeric particles and immobilised materials. The invention also provides a method for the cleaning of a substrate, the method comprising the treatment of the substrate with a formulation according to the invention, and a method for the preparation of the cleaning formulation of the invention which comprises treating a multiplicity of polymeric particles with at least one cleaning agent.

A cleaning composition is particularly suited for cleaning dirty intake valves. The cleaning composition includes a high solvency surfactant/solvent which has a Kb greater than 100 or polar Hansen solubility parameter greater than 6. The surfactant/solvent is combined with an organic carrier and a surfactant. A wetting agent may also be employed. The cleaning composition is added to the intake air as a mist as the engine is running.

The use of a chemical composition in degassing of vessels is taught, said chemical composition comprising 1-10% by weight of an oxyalkylated dodecyl thiol; and 1-20% by weight of an alkyl di-substituted 9-decenamide. A method is further provided for degassing a vessel. The method comprises charging said vessel with chemical composition and a carrier medium, wherein said chemical composition comprises 1-10% by weight of an oxyalkylated dodecyl thiol and 1-20% by weight of an alkyl di-substituted 9-decenamide.

Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0: the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO.sup.?NH.sub.4.sup.+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.