The present invention relates to specific acylhydrazone compounds, their use as oxidation catalysts and to a process for removing stains and soil on textiles and hard surfaces. The compounds are substituted with a specific cyclic ammonium group adjacent to the acyl group. Further aspects of the invention are compositions or formulations comprising such compounds.

The present invention relates to a composition comprising a specific hyperbranched copolymer (HBC) of the monomers dodecenyl succinic acid anhydride, diisopropanol amine and bis-dimethylaminopropyl amine and the compound 1,3-propandiol and/or N-hydroxyoctanamide. It has been found that said hyperbranched copolymer synergistically enhances the antimicrobial action of a 1,3-propanediol and/or N-hydroxy-octanamide.

A method for producing a processed semiconductor substrate includes producing a laminate that has a semiconductor substrate provided with a bump ball, a support substrate, and an adhesive layer formed from an adhesive composition between the semiconductor substrate and the support substrate; processing the semiconductor substrate of the produced laminate; separating the semiconductor substrate after processing; and removing adhesive residue remaining on the separated semiconductor substrate with a cleaning agent composition. The adhesive composition contains a component that is curable through hydrosilylation. The cleaning agent composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent. The metal corrosion inhibitor contains a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.

Provided is a method for producing a decomposing/cleaning composition which improves etching speed retention. In particular, a method for producing a decomposing/cleaning composition which contains (A) an N-substituted amide compound in which a hydrogen atom is not directly bonded to a nitrogen atom and (B) a quaternary alkyl ammonium fluoride or a hydrate thereof is provided, the method having a preparation step for mixing the (A) and (B) components in an inert gas atmosphere.

Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0: the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO.sup.NH.sub.4.sup.+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.

A cleaning composition includes a cyclic amide-based compound represented by Chemical Formula 1, a polar aprotic solvent, and a fluorine-based compound. The cleaning composition can rapidly remove a silicon-based polymer without generating residue and etching a metal layer. The cleaning composition can be used for a cleaning process of a wafer in a fabrication of a semiconductor device.