The present invention relates to a cleaner composition. Specifically, the present invention relates to a cleaner composition that can be used to remove metal oxides and metal abrasive particles arising during metal polishing, such as chemical mechanical planarization (CMP). The cleaner composition has an improved ability to complex with metal abrasive particles. In addition, the cleaner composition maintains its ability to reduce metal abrasive particles, achieving improved stability. Therefore, the cleaner composition can be used for cleaning the surface of a metal with an increased ability to prevent corrosion of the metal surface.

The present invention comprises chlorinated and non-chlorinated alkaline cleaning compositions for removal of proteinaceous and fatty soils at low temperature, i.e. less than 120° F., with little or no deleterious affect on cleaning performance. According to the invention, applicants have found that adding additional alkalinity makes protein removal more difficult and reducing the amount of alkalinity actually improves performance. According to the invention optimized combinations of chlorine and alkalinity components for low temperature cleaning as well as a surfactant system optimized for low temperature fatty soil removal are disclosed.

A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.

Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.

The present invention comprises chlorinated and non-chlorinated alkaline cleaning compositions for removal of proteinaceous and fatty soils at low temperature, i.e. less than 120° F., with little or no deleterious affect on cleaning performance. According to the invention, applicants have found that adding additional alkalinity makes protein removal more difficult and reducing the amount of alkalinity actually improves performance. According to the invention optimized combinations of chlorine and alkalinity components for low temperature cleaning as well as a surfactant system optimized for low temperature fatty soil removal are disclosed.

A polyimide-based resin film cleaning liquid includes at least one solvent selected from the group consisting of a hydroxy aliphatic carboxylic acid ester, an aliphatic carboxylic acid ester, a chain or cyclic ketone, an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, and an aprotic polar solvent other than these solvents.

Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.

The present invention relates generally to stable percarboxylic acid compositions comprising, inter alia, at least two stabilizing agents, and various uses for water treatments, including water treatments in connection with oil- and gas-field operations. The present invention also relates to slick water compositions and gel based compositions that comprise stable percarboxylic acid compositions and the use thereof in oil- and gas-field operations.