A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) alkanolamine; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.−12 to 10.sup.−4.

Described are methods for removing abrasive particles from a polymeric surface, such as from a polymeric surface of a cleaning brush used in a post chemical-mechanical processing cleaning step, as well as related cleaning solutions.

The present invention relates to compounds which form, under perhydrolysis conditions, certain cationic organic peracids, to the use of said compounds for activating peroxygen compounds in the context of bleaching stains when washing textiles and cleaning hard surfaces, and to washing and cleaning agents that contain said compounds.

Provided is a composition which has an excellent affinity with the surface of an adhesive agent and can achieve a high etching rate. The composition according to one embodiment comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and, as an aprotic solvent, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom, and (B) a dipropylene glycol dimethyl ether, wherein (B) the dipropylene glycol dimethyl ether has the percentage of a structural isomer represented by formula (1) of at least 50 mass % with respect to the total amount of (B) the dipropylene glycol dimethyl ether.

##STR00001##

The present disclosure relates to a process solution composition for polymer treatment comprising: a fluorine compound; a ketone-based solvent; and a polar aprotic solvent, wherein the ketone-based solvent is one or more selected from the group consisting of compounds represented by Chemical Formula 1 or Chemical Formula 2, and has an effect capable of preventing damage to various types of metals while improving the power of removing an adhesive polymer remaining on the wafer circuit surface in a semiconductor manufacturing process.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.