The present invention relates to a composition and a method for treating substrates, such as fabrics; in particular a composition that can deliver cleaning and anti-microbial benefits to the fabric thereby delaying laundry. There is a long left need for a composition, which can clean the fabric and deliver anti-microbial benefits without the use of water and detergents. It is therefore an object of the present invention to provide a composition with no surfactants in it which can deliver cleaning and anti-microbial benefits through a single product. It has been found that cleaning and anti-microbial benefits on fabric can be achieved by a solvent mix of a glycol ether, a fatty acid ester and a diol in combination with a bipolar antimicrobial particle in an aqueous solution.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The present invention relates to: a liquid composition suitable for the washing of a semiconductor element provided with a low-dielectric-constant interlayer insulating film; and a method for washing a semiconductor element. The liquid composition according to the present invention is characterized by containing tetrafluoroboric acid (A) in an amount of 0.01 to 30% by mass, or boric acid (B1) and hydrogen fluoride (B2) at a (boric acid)/(hydrogen fluoride) ratio of (0.0001 to 5.0/by mass)/(0.005 to 5.0% by mass), and having a pH value of 0.0 to 4.0. The liquid composition according to the present invention can reduce the damage of a low-dielectric-constant interlayer insulating film, cobalt or a cobalt alloy, alumina, a zirconia-based hard mask and a silicon nitride during the process of producing a semiconductor integrated circuit, and accordingly can be used suitably for removing dry etching residues occurring on the surface of the semiconductor integrated circuit.

Described herein is dioxolane-containing compound of formula (I) wherein (i) Rf.sup.1 and Rf.sup.2 are independently linear or branched perfluoroalkyi groups having with 1-8 carbon atoms and optionally comprise at least one catenated heteroatom, or (ii) Rf.sup.1 and Rf.sup.2 are bonded together to form a ring structure having 4-6 carbon atoms and optionally comprise one or more catenated heteroatoms; Rf.sup.2 is a linear or branched perfluoroalkyi groups having with 1-3 carbon atoms; and R.sup.4 and R.sup.5 are independently selected from H, F, Cl, a linear or branched alkyl group having 1-3 carbon atoms, optionally wherein the alkyl group comprises at least one of: fluorine, chlorine, a hydroxyl group, or a catenated heteroatom; for use in cleaning compositions, as an electrolyte solvent, as a heat transfer fluid, or a vapor phase soldering fluid. There is also provided a method of making the dioxolane-containing compound, comprising: contacting a 1,2-diol compound with a fluorinated ethylenically unsaturated compound in the presence of a base. ##STR00001##

An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

A cleaning solution that is used, inter alia, for removal of residue of a photoresist pattern or etching residue, and has exceptional anticorrosion properties with respect to silicon nitride; and a method for cleaning a substrate using the cleaning solution. In a cleaning solution containing a hydrofluoric acid and a solvent, a polymer that includes units derived from a compound of a specific structure having a carboxylic acid amide bond (CON<) and an unsaturated double bond is blended as an anticorrosive agent. Polyvinylpyrrolidone is preferred as the polymer used as the anticorrosive agent.

Compositions and methods for cleaning surfaces, such as for removing residues or other coatings from molds and other industrial parts, such compositions comprising, for example, a first solvent comprising a pyrrolidone such as 2-pyrrolidone, 1-(2-hydroxyethyl)-2-pyrrolidone, or mixture thereof; and a second solvent selected from the group consisting of an imidazole (such as 1,2-dimethylimidizole), an alkylene glycol ether (such as ethylene glycol monobutyl ether or diethylene glycol monobutyl ether, a terpene (such as d-limonene), and mixtures thereof. In various embodiments, such methods are for removing residues from molds used in forming polyurethane parts, wherein residues comprise polyurethane, urethane reactants, and mold release agents. The compositions may be substantially free of 1-methyl-2-pyrrolidone and of 1-ethyl-2-pyrrolidone.

The present invention provides a compound for restoring contaminated soil or contaminated water for the removal of heavy metals and formaldehyde, comprising at least one selected from a trientine or a trientine derivative represented by Formula (1), a cyclen or a cyclen derivative represented by Formula (2), and a cyclam or cyclam derivative represented by Formula (3) as an active ingredient.

Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R).sub.4N.sup.+F.sup., wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.