Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

[Problem] To provide a cosmetic brush cleaner excellent in quick dryability and capable of removing stains such as deposited cosmetics with ease in the following manner: impregnating tissue paper, towel, or the like with the cleaner to wipe off the cosmetics, sebum, and the like deposited on a cosmetic brush; or directly spraying the cleaner on a cosmetic brush, and wiping the brush with dry tissue paper or the like. [Solution] A cosmetic brush cleaner including: (A) a lower alcohol in an amount of 30 to 99 mass %; (B) a volatile oil in an amount of 1 to 70 mass %; and (C) water in an amount of 7 mass % or less (including 0 mass %).

Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.

Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of at least one of dimethyl sulfoxide (DMSO) and N-formyl morpholine, and (B) a second component consisting of at least one of N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, N,N-dimethyl acetoacetamide and N-methyl--caprolactam.

A solvent composition has an oxygenated solvent and a siloxane solvent. In one embodiment, the oxygenated solvent is propylene glycol methyl ether and the siloxane solvent is hexamethyldisiloxane or octamethyltrisiloxane. In another embodiment, the solvent composition is an azeotrope of propylene glycol n-butyl ether and decamethyltetrasiloxane. The siloxane solvent can be used in any situation where one desires to remove a silicone deposit, e.g., conformal coatings, adhesives, sealants, greases, heat transfer fluids, paints, oils, etc.

The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.

Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of a sulfoxide, e.g., DMSO; (B) a second component consisting of a glycol ether, e.g., ethylene glycol monobutyl ether; and (C) a third component consisting of at least one of N-formyl morpholine, N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, triethyl phosphate, N,N-dimethyl acetamide; N,N-diethyl acetamide, N,N-diethyl propionamide, N-methyl acetamide, N-methyl propionamide, N-ethyl acetamide, and N-ethyl propionamide.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.