Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of at least one of dimethyl sulfoxide (DMSO) and N-formyl morpholine, and (B) a second component consisting of at least one of N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, N,N-dimethyl acetoacetamide and N-methyl--caprolactam.

[Problem] To provide a cosmetic brush cleaner excellent in quick dryability and capable of removing stains such as deposited cosmetics with ease in the following manner: impregnating tissue paper, towel, or the like with the cleaner to wipe off the cosmetics, sebum, and the like deposited on a cosmetic brush; or directly spraying the cleaner on a cosmetic brush, and wiping the brush with dry tissue paper or the like.

[Solution] A cosmetic brush cleaner including: (A) a lower alcohol in an amount of 30 to 99 mass %; (B) a volatile oil in an amount of 1 to 70 mass %; and (C) water in an amount of 7 mass % or less (including 0 mass %).

Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of a sulfoxide, e.g., DMSO; (B) a second component consisting of a glycol ether, e.g., ethylene glycol monobutyl ether; and (C) a third component consisting of at least one of N-formyl morpholine, N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, triethyl phosphate, N,N-dimethyl acetamide; N,N-diethyl acetamide, N,N-diethyl propionamide, N-methyl acetamide, N-methyl propionamide, N-ethyl acetamide, and N-ethyl propionamide.

A composition comprising: at least 25% of a fatty acid methyl ester having from 6 to 14 carbon atoms, or a mixture of such methyl esters; at least 15% of dimethyl sulfoxide, or DMSO; and at least 5% of a glyceryl fatty acid monoester having from 6 to 14 carbon atoms or a mixture of such glyceryl monoesters; the percentages being percentages by weight relative to the total weight of the composition. This composition is stable at low temperature and may be used as a cleaning, dissolvent, dispersant and/or diluent composition, especially for active principles in the plant protections field.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

Disclosed is a composition comprising, substantially consisting of or consisting of: at least 30% of DMSO; andat least 20% of a fatty acid methyl ester or a mixture of said type of esters, the fatty acid containing 6 to 10 carbon atoms, the percentages being in percent by weight in relation to the total weight of the composition. The invention also relates to the use of a composition of said type as a cleaning agent and/or dispersion and to a method for synthesizing said composition.

The invention relates to a composition intended for the cleaning of contaminants and flux residues on electronic assemblies, particularly solder cream residue. Said composition comprises: from 20% to 99.5% by weight of a main solvent consisting of at least a C6-C15 glycol ether, and optionally a secondary solvent, from 0.5% to 20% by weight of a selected acid additive which is a phosphoric acid ester. The invention also relates to a defluxing product incorporating said composition, as well as to the defluxing methods using these products

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.?12 to 10.sup.?4.

A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10.sup.12 to 10.sup.?4. A method for washing a substrate and a method for removing a resist use the treatment liquid.