C11D7/5009

CLEANING COMPOSITION

Provided herein is a cleaning composition including: from 20 to 90% by weight of dimethyl sulfoxide, from 5 to 30% by weight of at least one mineral oil (M), and from 5 to 50% by weight of at least one bipolar organic solvent (L). The ranges of proportions indicated are in each case based on the total weight of the cleaning composition. Also provided herein is a method of cleaning components by employing the cleaning composition, and also the cleaned components themselves.

CLEANING SOLUTION AND CLEANING METHOD FOR A SEMICONDUCTOR SUBSTRATE OR DEVICE
20190048293 · 2019-02-14 ·

A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a water miscible organic solvent, a quaternary ammonium hydroxide, and water. The water miscible organic solvent is a glycol ether based solvent or an aprotic polar solvent having a flash point of 60? C. or greater. The cleaning method includes using the cleaning solution to clean from the semiconductor substrate or the device a residue or film formed on the semiconductor substrate or adhered to the device, the residue or film including at least one of a resist and an inorganic substance that contains silicon atoms.

CLEANING COMPOSITION AND CLEANING METHOD

Provided are a cleaner composition that can exhibit excellent cleaning ability by including a predetermined amount of water, and can also effectively suppress metal corrosion; and a cleaning method thereof. Disclosed is a cleaner composition in a white turbid state including first to fourth organic solvents and water, in which the first organic solvent is a hydrophobic aromatic compound or the like; the second organic solvent is a hydrophobic monoalcohol compound; the third organic solvent is a predetermined hydrophilic nitrogen-containing compound or the like; the fourth organic solvent is a hydrophilic amine compound; the amount of incorporation of water is adjusted to a value within the range of 50 to 3,900 pbw with respect to 100 pbw of the total amount of the organic solvents, and when the cleaner composition is subjected to phase separation, the water concentration in the oil phase is adjusted to a value of 5 wt. % or less.

CLEANING COMPOSITION FOR LIQUID CRYSTAL ALIGNMENT LAYER AND MANUFACTURING METHOD OF LIQUID CRYSTAL ALIGNMENT LAYER USING THE SAME

The present invention relates to a cleaning composition for a liquid crystal alignment layer, a manufacturing method of a liquid crystal alignment layer using the same, and a liquid crystal display device including the liquid crystal alignment layer manufactured by the manufacturing method. More specifically, the present invention relates to a cleaning composition for a liquid crystal alignment layer that is capable of solving a non-uniformity problem of the liquid crystal alignment layer and effectively removing an ionic byproduct on a polymer surface to increase anisotropy of the liquid crystal alignment layer, by using a cleaning composition including a specific solvent in a cleaning process after a UV alignment process, and a manufacturing method of a liquid crystal alignment layer.

TiN pull-back and cleaning composition
10170296 · 2019-01-01 · ·

The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

PERMEABILITY AND TRANSFORMATION OF CELLS
20180305641 · 2018-10-25 ·

A method of inducing competence in cells, the method comprising contacting the cell with a composition comprising a quaternary ammonium compound including a silicon-containing functional group and a hydrocarbyl-saccharide compound.

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 ?m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.

USE OF COMPOUNDS INCLUDING A SULFOXIDE OR SULFONE FUNCTION AND AN AMIDE FUNCTION AS SOLVENTS AND NEW SOLVENTS
20180244615 · 2018-08-30 · ·

Provided is a composition that contains a compound a) and at least one chemical entity b) dissolved in compound a). Compound a) has at least one sulfoxide functional group and/or one sulfone functional group, and at least one amide functional group. The composition is useful for a variety of applications, including manufacturing a film, a coating on a support, a hollow fiber, an artificial leather, a polymeric fiber, a membrane, a separator or an electrode for batteries, an electronic circuit or a sheath for the protection of electric cables.

CLEANING FORMULATIONS
20180230405 · 2018-08-16 ·

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.

Method for cleaning micro-irrigation systems
10046369 · 2018-08-14 ·

A micro-irrigation system cleaning method adds a formulation which contains a water-soluble organic acid which has a pK(1)a of less than about 4.0, and optionally a water-soluble phosphonate dispersant. The cleaning continues for a time period of from three to twenty-four hours in a static environment.