The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.

A solvent composition has an oxygenated solvent and a siloxane solvent. In one embodiment, the oxygenated solvent is propylene glycol methyl ether and the siloxane solvent is hexamethyldisiloxane or octamethyltrisiloxane. In another embodiment, the solvent composition is an azeotrope of propylene glycol n-butyl ether and decamethyltetrasiloxane. The siloxane solvent can be used in any situation where one desires to remove a silicone deposit, e.g., conformal coatings, adhesives, sealants, greases, heat transfer fluids, paints, oils, etc.

The present disclosure provides, in part, a solvent composition for use as a hexane replacement. The solvent composition may include para-Chlorobenzotrifluoride (PCBTF), a methylated organosilicon compound, and an acetate ester.

The present disclosure provides, in part, a solvent composition for use as a heptane replacement. The solvent composition may include a first methylated organosilicon compound, an acetate ester, and either para-Chlorobenzotrifluoride (PCBTF) or a second methylated organosilicon compound or both.

Cleaning industrial plant components to remove silane, metal halide, and organometallic halide contaminants and mixtures thereof, involves treating the plant components with a liquid nitrile or amine or mixture thereof or with a solution of a nitrile or amine or mixture thereof in an aprotic solvent.

A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.

A fluorine-free cleaning agent is a water-based cleaning agent. The fluorine-free cleaning agent comprises of water, organic solvent and amine compound, wherein the mass of the organic solvent is 15-85% of the mass of the fluorine-free cleaning agent; and the mass of the amine compound is 5-50% of the mass of the fluorine-free cleaning agent. The fluorine-free cleaning agent further comprises of one or more of corrosion inhibitor, acid compound and alcohol compound. By means of a synergistic effect of the specific amine compound and one or more of corrosion inhibitor, acid and alcohol, the fluorine-free cleaning agent provided in the present disclosure showed good cleaning capability even without fluoride by comparing with the prior art.

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

This invention relates to non aqueous non-volatile alkylated siloxane compositions having low VOC and vapor pressure of about 31 millimeters of mercury at 20 C. consisting essentially of a mixture of a linear or open-chain methyl alkylated siloxane having two silicon atoms and a siloxane having three silicon atoms alkylated with methyl groups.

This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.