A cleaning solution for temporary adhesive for substrates contains: tetrabutylammonium fluoride; dimethyl sulfoxide; and a liquid compound having a solubility parameter of 8.0 or more and 10.0 or less and having a heteroatom. The tetrabutylammonium fluoride is preferably contained at a content of 1 mass % or more and 15 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound. The dimethyl sulfoxide is preferably contained at a content of 5 mass % or more and 30 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound.

A stripper composition and a method for stripping a photoresist are provided. The stripper composition includes an ether-alcohol-based organic solvent (A), another organic solvent (B), an alkaline substance (C), a substrate corrosion inhibitor (D), and water (E). The another organic solvent (B) does not include the ether-alcohol-based organic solvent. The alkaline substance (C) includes an organic base (C1), an inorganic base (C2), or a combination thereof. Based on a total usage amount of 100 parts by weight of the stripper composition, a usage amount of the ether-alcohol-based organic solvent (A) is 7 parts by weight to 70 parts by weight, and a usage amount of the substrate corrosion inhibitor (D) is greater than 0 part by weight and less than 18 parts by weight.

A method for cleaning a semiconductor substrate includes releasing and dissolving an adhesive layer formed on a semiconductor substrate using a releasing and dissolving composition, in which the releasing and dissolving composition contains: a component [I]: a quaternary ammonium salt; a component [II]: an amide-based solvent; and a component [III]: a solvent represented by the following Formula (L), where L represents a substituent substituted on a benzene ring and each independently represents an alkyl group having 1 to 4 carbon atoms, and k represents the number of L and is an integer of 0 to 5.

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Provided is a decomposing/cleaning composition for an adhesive polymer having a high etching rate and suppressed infiltration into a contact interface between a substrate such as a device wafer and an adhesive layer such as a fixing tape. The decomposing/cleaning composition of one embodiment is a decomposing/cleaning composition for an adhesive polymer containing a quaternary alkylammonium fluoride or a quaternary alkylammonium fluoride hydrate and an aprotic solvent, wherein the aprotic solvent contains (A) an N-substituted amide compound having no active hydrogens on the nitrogen atoms and (B) at least one organic sulfur oxide selected from the group consisting of sulfoxide compounds and sulfone compounds.

Solutions of polyvinylidene fluoride (PVDF) or copolymers of 1,1-difluoroethylene in a solvent which comprises N-formylmorpholine (NFM), N-acetylmorpholine (NAM) or mixtures thereof and additionally a cosolvent selected from alkylene carbonate, mono-, di- or polyalkylene glycol dialkyl ethers or mixtures thereof.

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

A mask cleaning composition for cleaning a deposition mask includes a solvent having a Hansen solubility parameter distance R.sub.a1 of 7.35 (MPa).sup.1/2 or less, the Hansen solubility parameter distance R.sub.a1 being expressed by Equation below: R.sub.a1={4(17.9D).sup.2+(9.9P).sup.2+(7.4H).sup.2}.sup.1/2, where D (MPa).sup.1/2 indicates a dispersion power term of the solvent, P (MPa).sup.1/2 indicates a polarity term of the solvent, and H (MPa).sup.1/2 indicates a hydrogen bonding force term of the solvent.

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.