Use as a decalcifying and descaling remover of a composition comprising: a) a first solvent selected from: optionally associated with a second solvent b) selected from at least a lower alcohol, water or mixtures thereof, wherein a1) a eutectic solvent consisting of a hydrogen bond acceptor and of a hydrogen bond donor, a2) an ionic liquid or a3) a mixture of said eutectic solvent and said ionic liquid; in the first eutectic solvent a1) the hydrogen bond acceptor and the hydrogen bond donor are halogen-free.

Provided is a composition which has an excellent affinity with the surface of an adhesive agent and can achieve a high etching rate. The composition according to one embodiment comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and, as an aprotic solvent, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom, and (B) a dipropylene glycol dimethyl ether, wherein (B) the dipropylene glycol dimethyl ether has the percentage of a structural isomer represented by formula (1) of at least 50 mass % with respect to the total amount of (B) the dipropylene glycol dimethyl ether.

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A method of removing from a surface a solid sulfur-containing impurity composition comprising a sulfur-containing compound, the method comprising the step of dissolving sulfur-containing compound in the sulfur-containing impurity composition with a nitrile compound to form a treated sulfur-containing impurity composition comprising less than 99.5 wt % sulfur-containing compound, based on the total weight of the treated sulfur-containing impurity composition.

Provided is a composition having high affinity for the surface of an adhesive, and excellent long-term storage stability. This composition comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and an aprotic solvent, wherein the aprotic solvent includes (A) an N-substituted amide compound having 4 or more carbon atoms and not containing active hydrogen on a nitrogen atom, and (B) an ether compound.

A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

According to the present invention, there is provided a cleaning agent composition for a semiconductor device substrate including at least one of wiring and an electrode in which the wiring and the electrode contain cobalt or a cobalt alloy, the cleaning agent composition including a component (A): at least one compound selected from the group consisting of specific compounds; and a component (B): water.

A composition that can decontaminate opioids on surfaces or objects, and in particular decontaminate fentanyls on surfaces using an opioid-active reagent and an opioid-effective solubilizing agent, which is a mixture of an alkyl dimethylamine oxide surfactant, an alkyl dimethylamine oxide surfactant, a C.sub.8-18 alkyl polyethylene glycol sorbitan fatty ester surfactant, and a C.sub.12-14 secondary alcohol ethoxylate surfactant. Preferably, the opioid-active reagent is chlorine dioxide. Additionally, methods for decontaminating opioids on surfaces using this composition.

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.

The present disclosure provides a composition for cleaning or stripping a material from a substrate. The composition includes a primary solvent and a co-solvent. The co-solvent includes one or more caprolactam-derived solvents.